scholarly journals Atomic structure of grain boundaries in UO2 Bicrystals: A coupled high resolution transmission electron Microscopy/Atomistic simulation approach

2022 ◽  
Vol 206 ◽  
pp. 114191
Author(s):  
Emeric Bourasseau ◽  
Claire Onofri ◽  
Amani Ksibi ◽  
Xavière Iltis ◽  
Renaud C. Belin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Atomistic Simulation ◽  
Simulation Approach ◽  
Transmission Electron

Structure of Low- And High-Angle Grain Boundaries In YBCO/MgO Films

1998 ◽  
Vol 4 (S2) ◽  
pp. 676-677
Author(s):  
S. Oktyabrsky ◽  
R. Kalyanaraman ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Boundary Plane ◽  
Dislocation Model ◽  
High Angle ◽  
Transmission Electron

Grain boundaries (GBs) in laser deposited YB2Cu3O7-δ/MgO(001) thin films have been investigated by high-resolution transmission electron microscopy (TEM) and scanning TEM (STEM). We report both statistics and atomic structure of low-angle and high-angle [001] tilt grain boundaries resulting from almost perfect c-axis textured YBCO films.Atomic structure of low-angle GBs was analyzed using a dislocation model. These boundaries have been found to be aligned primarily along (100) and (110) interface planes. For (100) boundary plane, the GB consists of a periodic array of [100] dislocations (Fig.l). For (110) boundary plane, the array is also periodic but every [110] dislocation is split by ∼ 1.5 nm into two [100] and [010] dislocations (Fig.2). We have calculated energy of various configurations and shown that the energy of the (110) boundary with dissociated dislocations is comparable to that of (100) boundary, which explains the coexistence of (100) and (110) interface facets along the boundary.

Atomic Structure and Property Correlation in Pulsed Laser Deposited High -Tc Films

1998 ◽  
Vol 526 ◽  
Author(s):  
R. Kalyanaraman ◽  
S. Oktyabrsky ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Structure And Property ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Z Contrast

AbstractThe atomic structure of grain boundaries in pulsed laser deposited YBCO/MgO thin films have been studied using transmission electron microscopy. The films have perfect texturing with YBCO(001)//MgO(001), giving rise to low-angle [001] tilt boundaries from the grains with the c-axis normal to substrate surface. Low angle grain boundaries have been found to be aligned preferentially along (100) and (110) interface planes. The energy of (110) boundary planes described by an alternating array of [100] and [010] dislocation is found to be comparable to the energy of a (100) boundary. The existence of these split dislocations is shown to further reduce the theoretical current densities of these boundaries indicating that (110) boundaries carry less current as compared to (100) boundaries of the same misorientation angle. Further, Z-contrast transmission electron microscopy of a 42° asymmetric high-angle grain boundary of YBCO shows evidence for the existence of boundary fragments and a reduced atomic density along the boundary plane

A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

1999 ◽  
Vol 588 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Excitonic Emission

AbstractThe band-A emission (around 2.8 eV) observed in high quality (device-grade) homoepitaxial diamond films grown by microwave-plasma chemical vapor deposition (CVD) was studied by means of scanning cathodoluminescence spectroscopy and high-resolution transmission electron microscopy. Recent progress in our study on homoepitaxial diamond films was obtained through the low CH4/H2 conditions by CVD. These showed atomically flat surfaces and the excitonic emission at room temperature, while the band-A emission (2.95 eV) decreased. Using these samples, we found that the band-A emission only appeared at unepitaxial crystallites (UC) sites, while other flat surface parts still showed the excitonic emission. High-resolution transmission electron microscopy revealed that there were grain boundaries which contained π-bonds in UC. This indicates that one of the origin of the band-A emission in diamond films is attributed to π bonds of grain boundaries.

High-resolution transmission electron microscopy of an atomic structure at a Si(001) oxidation front

2000 ◽  
Vol 62 (23) ◽  
pp. 15989-15995 ◽  
Author(s):  
Nobuyuki Ikarashi ◽  
Koji Watanabe ◽  
Yoshiyuki Miyamoto
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
Transmission Electron

High-resolution Transmission Electron Microscopy Study of Compositional Effects on the Atomic Structure of Multiferroic PbTi1-xFexO3 Nanopowders

2012 ◽  
Vol 18 (S2) ◽  
pp. 1896-1897
Author(s):  
M.A. Schofield ◽  
S. Sen ◽  
Y. Zou ◽  
S.K. Ray ◽  
P. Guptasarma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Transmission Electron Microscopy Study ◽  
Transmission Electron ◽  
Compositional Effects

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Characterization of Grain Boundaries in Electronic Ceramics by Transmission Electron Microscopy

1981 ◽  
Vol 5 ◽  
Author(s):  
David R. Clarke
Keyword(s):  
Electron Microscopy ◽  
Boundary Layer ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Electronic Ceramics ◽  
Transmission Electron ◽  
Zno Varistors ◽  
Microscopy Techniques

ABSTRACTThe principal high resolution transmission electron microscopy techniques used in characterizing grain boundaries in electronic ceramics are described, including those recently developed for detecting the presence of extremely thin (∼10Å) intergranular phases. The capabilities of the techniques are illustrated with examples drawn from studies of ZnO varistors, PTC BaTiO3 devices and boundary layer capacitors.

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