A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

1999 ◽  
Vol 588 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Excitonic Emission

AbstractThe band-A emission (around 2.8 eV) observed in high quality (device-grade) homoepitaxial diamond films grown by microwave-plasma chemical vapor deposition (CVD) was studied by means of scanning cathodoluminescence spectroscopy and high-resolution transmission electron microscopy. Recent progress in our study on homoepitaxial diamond films was obtained through the low CH4/H2 conditions by CVD. These showed atomically flat surfaces and the excitonic emission at room temperature, while the band-A emission (2.95 eV) decreased. Using these samples, we found that the band-A emission only appeared at unepitaxial crystallites (UC) sites, while other flat surface parts still showed the excitonic emission. High-resolution transmission electron microscopy revealed that there were grain boundaries which contained π-bonds in UC. This indicates that one of the origin of the band-A emission in diamond films is attributed to π bonds of grain boundaries.

Investigation of the low angle grain boundaries in highly oriented diamond films via transmission electron microscopy

1994 ◽  
Vol 9 (10) ◽  
pp. 2487-2489 ◽  
Author(s):  
F.R. Sivazlian ◽  
J.T. Glass ◽  
B.R. Stoner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plan View ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Defect Densities

Highly oriented diamond thin films grown on silicon via microwave plasma chemical vapor deposition were examined by transmission electron microscopy. In the plan view, defects appearing at the grain boundary were easily observed. (100) faceted grains that appeared to have coalesced were connected at their interfaces by dislocations characteristic of a low angle grain boundary. From Burgers vector calculations and electron diffraction patterns, the azimuthal rotation between grains was measured to be between 0 and 6°. The defect densities of these films are compared to reports from (100) textured randomly oriented films, and the relative improvement due to the reduction of misorientation and grain boundary angles is discussed.

Highly oriented diamond growth on positively biased Si substrates

2001 ◽  
Vol 16 (12) ◽  
pp. 3351-3354 ◽  
Author(s):  
Te-Fu Chang ◽  
Li Chang
Keyword(s):  
Electron Microscopy ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Transmission Electron

Deposition of highly textured diamond films on Si(001) has been achieved by using positively bias-enhanced nucleation in microwave plasma chemical vapor deposition. During the biasing period, an additional glow discharge due to the dc plasma effect appeared between the electrode and the substrate. The discharge is necessary for enhanced nucleation of diamond. X-ray diffraction, scanning electron microscopy, and cross-sectional transmission electron microscopy (XTEM) were used to characterize the microstructure of the diamond films on Si. The results show the morphology of diamond grains in square shape with strong diamond (001) texture. XTEM reveals that an amorphous interlayer formed on the smooth Si surface before diamond nucleation.

Defects Analysis of Diamond Films in Cross Section Using Cathodoluminescence and High-Resolution Transmission Electron Microscopy

2001 ◽  
Vol 78-79 ◽  
pp. 197-204
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hidetaka Sawada ◽  
Hideki Ichinose ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Diamond Films ◽  
Transmission Electron ◽  
Defects Analysis

Characterization of Grain Boundaries in Electronic Ceramics by Transmission Electron Microscopy

1981 ◽  
Vol 5 ◽  
Author(s):  
David R. Clarke
Keyword(s):  
Electron Microscopy ◽  
Boundary Layer ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Electronic Ceramics ◽  
Transmission Electron ◽  
Zno Varistors ◽  
Microscopy Techniques

ABSTRACTThe principal high resolution transmission electron microscopy techniques used in characterizing grain boundaries in electronic ceramics are described, including those recently developed for detecting the presence of extremely thin (∼10Å) intergranular phases. The capabilities of the techniques are illustrated with examples drawn from studies of ZnO varistors, PTC BaTiO3 devices and boundary layer capacitors.

Grain Boundary Transformations in Bi-Doped Copper

1991 ◽  
Vol 238 ◽  
Author(s):  
Elsie C. Urdaneta ◽  
David E. Luzzi ◽  
Charles J. McMahon
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Treatment Time ◽  
High Resolution Electron Microscopy ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTBismuth-induced grain boundary faceting in Cu-12 at ppm Bi polycrystals was studied using transmission electron microscopy (TEM). The population of faceted grain boundaries in samples aged at 600°C was observed to increase with heat treatment time from 15min to 24h; aging for 72h resulted in de-faceting, presumably due to loss of Bi from the specimen. The majority of completely faceted boundaries were found between grains with misorientation Σ=3. About 65% of the facets of these boundaries were found to lie parallel to crystal plane pairs of the type {111}1/{111]2- The significance of these findings in light of recent high resolution electron microscopy experiments is discussed.

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