Characterization of Grain Boundaries in Electronic Ceramics by Transmission Electron Microscopy

1981 ◽  
Vol 5 ◽  
Author(s):  
David R. Clarke
Keyword(s):  
Electron Microscopy ◽  
Boundary Layer ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Electronic Ceramics ◽  
Transmission Electron ◽  
Zno Varistors ◽  
Microscopy Techniques

ABSTRACTThe principal high resolution transmission electron microscopy techniques used in characterizing grain boundaries in electronic ceramics are described, including those recently developed for detecting the presence of extremely thin (∼10Å) intergranular phases. The capabilities of the techniques are illustrated with examples drawn from studies of ZnO varistors, PTC BaTiO3 devices and boundary layer capacitors.

scholarly journals Synthesize and Characterization of Hollow Boron-Nitride Nanocages

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Growth Mechanism ◽  
Spherical Shape ◽  
Amorphous Boron ◽  
Transmission Electron ◽  
Ammonia Atmosphere

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.

Characterization of surface structure in heterogeneous catalysts by high-resolution transmission electron microscopy

1990 ◽  
Vol 34 (1-2) ◽  
pp. 47-53 ◽  
Author(s):  
Abhaya K. Datye ◽  
A.David Logan ◽  
Katherine J. Blankenburg ◽  
David J. Smith
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Surface Structure ◽  
Heterogeneous Catalysts ◽  
Transmission Electron

The Creation and Annealing of Heavy Ion Damage in Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
L. M. Howe ◽  
M. H. Rainville
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spatial Distribution ◽  
High Resolution ◽  
Heavy Ion ◽  
High Energy ◽  
Transmission Electron ◽  
Ion Damage ◽  
Deposited Energy ◽  
Microscopy Techniques

ABSTRACTHigh resolution transmission electron microscopy techniques have been used to obtain information on the contrast, spatial distribution, size and annealing behaviour of the damaged regions produced within individual collision cascades by heavy ion (As, Sb and Bi) bombardment (10–120 KeV) of silicon with 1.0 × 1011 – 6.0 × 1011 ions cm−2. The fraction of the theoretical cascade volume occupied by a heavily damaged region steadily increased as the average deposited energy density within the cascade increased. At high energy densities, the visible damage produced in the main cascade consisted of a single, isolated damaged region. With decreasing values of (i.e. increasing ion implant energies), there was an increasing tendency for multiple damaged regions to be produced within the main cascade.

A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

1999 ◽  
Vol 588 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Excitonic Emission

AbstractThe band-A emission (around 2.8 eV) observed in high quality (device-grade) homoepitaxial diamond films grown by microwave-plasma chemical vapor deposition (CVD) was studied by means of scanning cathodoluminescence spectroscopy and high-resolution transmission electron microscopy. Recent progress in our study on homoepitaxial diamond films was obtained through the low CH4/H2 conditions by CVD. These showed atomically flat surfaces and the excitonic emission at room temperature, while the band-A emission (2.95 eV) decreased. Using these samples, we found that the band-A emission only appeared at unepitaxial crystallites (UC) sites, while other flat surface parts still showed the excitonic emission. High-resolution transmission electron microscopy revealed that there were grain boundaries which contained π-bonds in UC. This indicates that one of the origin of the band-A emission in diamond films is attributed to π bonds of grain boundaries.

Characterization of Amorphized Zeolite A by Combining High-Energy X-ray Diffraction and High-Resolution Transmission Electron Microscopy

2012 ◽  
Vol 116 (48) ◽  
pp. 25293-25299 ◽  
Author(s):  
Kaku Sato ◽  
Toru Wakihara ◽  
Shinji Kohara ◽  
Koji Ohara ◽  
Junichi Tatami ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Energy ◽  
Zeolite A ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron
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