Manipulation of [Ga]/([Ga] + [In]) profile in 1.4-μm-thick Cu(In,Ga)Se2 thin film on flexible stainless steel substrate for enhancing short-circuit current density and conversion efficiency of its solar cell

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

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CHARACTERISTICS OF PHOSPHORUS-DOPED AMORPHOUS CARBON FILMS GROWN BY R. F. PLASMA-ENHANCED CVD WITH A NOVEL PHOSPHORUS SOLID TARGET

Surface Review and Letters ◽

10.1142/s0218625x05006731 ◽

2005 ◽

Vol 12 (01) ◽

pp. 19-25 ◽

Cited By ~ 2

Author(s):

M. RUSOP ◽

M. ADACHI ◽

T. SOGA ◽

T. JIMBO

Keyword(s):

Solar Cell ◽

Conversion Efficiency ◽

Amorphous Carbon ◽

Current Density ◽

Fill Factor ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Phosphorus Doped

Phosphorus-doped amorphous carbon (n-C:P) films were grown by r. f.-power-assisted plasma-enhanced chemical vapor deposition at room temperature using a novel solid red phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density, open circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cell that was measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm 2, 25°C). The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 236 V and 7.34, mAcm 2 respectively for the n-C:P/p-Si cell grown at lower r. f. power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.

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Novel Photonic Crystal Based Polycrystalline CdTe/Silicon Solar Cells

SRPH Journal of Fundamental Sciences and Technology ◽

10.47176/sjfst.3.1.5 ◽

2020 ◽

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Photonic Crystal ◽

Conversion Efficiency ◽

Current Density ◽

Cell Structure ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Silicon Solar Cells

In this paper, a novel photonic crystal (PhC) polycrystalline CdTe/Silicon solar cells are theoretically explained that increase their short circuit current density and conversion efficiency. The proposed structure consist of a polycrystalline CdTe/Silicon solar cell that a photonic crystal is formed in the upper cell. The optical confinement is achieved by means of photonic crystal that can adjust the propagation and distribution of photons in solar cells. For validation of modeling, the electrical properties of the experimentally-fabricated based CdS/CdTe solar cell is modeled and compared that there is good agreement between the modeling results and experimental results from the litterature. The results of this study showed that the solar cell efficiency is increased by about 25% compared to the reference cell by using photonic crystal. The open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1.01 V, 40.7 mA/cm2, 0.95 and 27% under global AM 1.5 conditions, respectively. Furthermore, the influence of carrier lifetime variation in the absorber layer of proposed solar cell on the electrical characteristics was theoretically considered and investigated.

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High short-circuit current density in a non-toxic Bi2S3 Quantum dot sensitized solar cell

Materials Today Energy ◽

10.1016/j.mtener.2021.100783 ◽

2021 ◽

pp. 100783

Author(s):

Christopher Rosiles-Perez ◽

Sirak Sidhik ◽

Luis Ixtilico-Cortés ◽

Fernando Robles-Montes ◽

Tzarara López-Luke ◽

...

Keyword(s):

Solar Cell ◽

Quantum Dot ◽

Current Density ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density

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CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽

10.3390/en14061684 ◽

2021 ◽

Vol 14 (6) ◽

pp. 1684

Author(s):

Alessandro Romeo ◽

Elisa Artegiani

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Early Years ◽

Solar Cell Efficiency ◽

Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

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Over 30% efficiency bifacial 4-terminal perovskite-heterojunction silicon tandem solar cells with spectral albedo

Scientific Reports ◽

10.1038/s41598-021-94848-4 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Sangho Kim ◽

Thanh Thuy Trinh ◽

Jinjoo Park ◽

Duy Phong Pham ◽

Sunhwa Lee ◽

...

Keyword(s):

Solar Cell ◽

Conversion Efficiency ◽

Crystalline Silicon ◽

Short Circuit ◽

Solar Spectrum ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Production Costs ◽

White Sand ◽

Reflected Light

AbstractWe developed and designed a bifacial four-terminal perovskite (PVK)/crystalline silicon (c-Si) heterojunction (HJ) tandem solar cell configuration albedo reflection in which the c-Si HJ bottom sub-cell absorbs the solar spectrum from both the front and rear sides (reflected light from the background such as green grass, white sand, red brick, roofing shingle, snow, etc.). Using the albedo reflection and the subsequent short-circuit current density, the conversion efficiency of the PVK-filtered c-Si HJ bottom sub-cell was improved regardless of the PVK top sub-cell properties. This approach achieved a conversion efficiency exceeding 30%, which is higher than those of both the top and bottom sub-cells. Notably, this efficiency is also greater than the Schockley–Quiesser limit of the c-Si solar cell (approximately 29.43%). The proposed approach has the potential to lower industrial solar cell production costs in the near future.

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Optimized Thin-Film Organic Solar Cell with Enhanced Efficiency

Sustainability ◽

10.3390/su132313087 ◽

2021 ◽

Vol 13 (23) ◽

pp. 13087

Author(s):

Waqas Farooq ◽

Muhammad Ali Musarat ◽

Javed Iqbal ◽

Syed Asfandyar Ali Kazmi ◽

Adnan Daud Khan ◽

...

Keyword(s):

Thin Film ◽

Solar Cell ◽

Organic Solar Cell ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Bragg Reflector ◽

Performance Parameters ◽

Distributed Bragg Reflector

Modification of a cell’s architecture can enhance the performance parameters. This paper reports on the numerical modeling of a thin-film organic solar cell (OSC) featuring distributed Bragg reflector (DBR) pairs. The utilization of DBR pairs via the proposed method was found to be beneficial in terms of increasing the performance parameters. The extracted results showed that using DBR pairs helps capture the reflected light back into the active region by improving the photovoltaic parameters as compared to the structure without DBR pairs. Moreover, implementing three DBR pairs resulted in the best enhancement gain of 1.076% in power conversion efficiency. The measured results under a global AM of 1.5G were as follows: open circuit voltage (Voc) = 0.839 V; short circuit current density (Jsc) = 10.98 mA/cm2; fill factor (FF) = 78.39%; efficiency (η) = 11.02%. In addition, a thermal stability analysis of the proposed design was performed and we observed that high temperature resulted in a decrease in η from 11.02 to 10.70%. Our demonstrated design may provide a pathway for the practical application of OSCs.

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Electrochemical mechanical polishing of thin film solar cell flexible stainless steel substrate

Optics and Precision Engineering ◽

10.3788/ope.20162402.0343 ◽

2016 ◽

Vol 24 (2) ◽

pp. 343-349 ◽

Cited By ~ 1

Author(s):

张克华 ZHANG Ke-hua ◽

石栋 SHI Dong ◽

刘润之 LIU Run-zhi ◽

肖志兰 XIAO Zhi-lan ◽

程光明 CHENG Guang-ming

Keyword(s):

Thin Film ◽

Stainless Steel ◽

Solar Cell ◽

Thin Film Solar Cell ◽

Stainless Steel Substrate ◽

Steel Substrate ◽

Mechanical Polishing ◽

Electrochemical Mechanical Polishing

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Insulating oxide buffer layer formed by sol–gel method for planarization of stainless steel substrate of a-Si:H thin film solar cell

Materials Research Bulletin ◽

10.1016/j.materresbull.2012.04.129 ◽

2012 ◽

Vol 47 (10) ◽

pp. 3044-3047 ◽

Cited By ~ 3

Author(s):

Sun Jin Yun ◽

Yoo Jeong Lee ◽

Jung Wook Lim ◽

Joung Hee Yun ◽

Jehoon Baek ◽

...

Keyword(s):

Thin Film ◽

Stainless Steel ◽

Solar Cell ◽

Buffer Layer ◽

Thin Film Solar Cell ◽

Stainless Steel Substrate ◽

Steel Substrate ◽

Sol Gel ◽

Gel Method ◽

Sol Gel Method

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Nanoimprint Photonic Crystal Film Enhanced Light-Trapping in a-Si Thin Film Solar Cells

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.110-116.497 ◽

2011 ◽

Vol 110-116 ◽

pp. 497-502

Author(s):

Wei Ping Chu ◽

Fuh Shyang Juang ◽

Jian Shian Lin ◽

Tien Chai Lin ◽

Chen Wei Kuo

Keyword(s):

Thin Film ◽

Solar Cells ◽

Photonic Crystals ◽

Current Density ◽

Light Trapping ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Thin Film Solar Cells ◽

Uv Lamp

We utilize photonic crystals to enhanced lighttrapping in a-Si:H thin film solar cells. The photonic crystals effectively increase Haze ratio of glass and decrease reflectance of a-Si:H solar cells. Therefore, increase the photon path length to obtain maximum absorption of the absorber layer. The photonic crystals can effective in harvesting weakly absorbing photons with energies just above the band edge. We were spin coated UV glue on the glass, and then nanoimprint of photonic crystals pattern. Finally, used UV lamp was curing of UV glue on the glass. When the 45∘composite photonic crystals structures, the haze was increase to 87.9 %, resulting the short circuit current density and efficiency increasing to 13.96 mA/cm2 and 7.39 %, respectively. Because 45∘composite photonic crystals easy to focus on the point of light lead to the effect of scattering can’t achieve. So, we designs 90∘V-shaped photonic crystals structures to increase scattering. When the 90∘V-shaped photonic crystals structures, the Haze was increase to 93.9 %. Therefore, the short circuit current density and Efficiency increasing to 15.62 mA/cm2 and 8.09 %, respectively. We observed ~35 % enhancement of the short-circuit current density and ~31 % enhancement of the conversion efficiency.

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