Characterization of heterojunctions in crystalline-silicon-based solar cells by internal photoemission

2009 ◽  
Vol 93 (6-7) ◽  
pp. 737-741 ◽  
Author(s):  
Isao Sakata ◽  
Mitsuyuki Yamanaka ◽  
Hitoshi Kawanami
2014 ◽  
Vol 16 (29) ◽  
pp. 15400-15410 ◽  
Author(s):  
Yiming Liu ◽  
Yun Sun ◽  
Wei Liu ◽  
Jianghong Yao

A novel high-efficiency c-Si heterojunction solar cell with using compound hetero-materials is proposed and denominated HCT (heterojunction with a compound thin-layer).


2015 ◽  
Vol 107 (20) ◽  
pp. 203301 ◽  
Author(s):  
M. Zellmeier ◽  
J. Rappich ◽  
M. Klaus ◽  
Ch. Genzel ◽  
S. Janietz ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. Binetti ◽  
M. Acciarri ◽  
A. Le Donne ◽  
M. Morgano ◽  
Y. Jestin

Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV) modules are based on crystalline silicon (c-Si). PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.


2014 ◽  
Vol 65 (2) ◽  
pp. 111-115 ◽  
Author(s):  
Miroslav Mikolášek ◽  
Michal Nemec ◽  
Jaroslav Kováč ◽  
Ladislav Harmatha ◽  
Lukáš Minařík

Abstract In this paper we present the utilization of capacitance and current-voltage diagnostic techniques to analyse silicon heterojunction solar cell structures properties, particularly focused on the inspection of the amorphous emitter and amorphous silicon/crystalline silicon hetero-interface. The capacitance characterization of investigated samples have revealed the need for improvement of the a-Si:H/c-Si heterointerface quality as a main direction to obtain superior output performance of heterojunction cells. In addition, current-voltage characterization emphasized importance for enhancement of the light management in the structure. The obtained results demonstrate that electrical and capacitance diagnostic techniques can represents important diagnostic tools in the process of optimization of solar cells.


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