Wide-bandgap nanocrystalline silicon-carbon alloys for photovoltaic applications

2018 ◽  
Vol 182 ◽  
pp. 220-227 ◽  
Author(s):  
Jun-Sik Cho ◽  
Eunseok Jang ◽  
Dongmin Lim ◽  
Seungkyu Ahn ◽  
Jinsu Yoo ◽  
...  
2002 ◽  
Vol 16 (01n02) ◽  
pp. 57-63 ◽  
Author(s):  
X. DENG ◽  
W. WANG ◽  
S. HAN ◽  
H. POVOLNY ◽  
W. DU ◽  
...  

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The p-layer consists of nanometer-sized Si Crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V oc = 1.045 V and FF = 70.3%, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells are discussed on the bases on the bases of the density-functional approach and the AMPS model.


2010 ◽  
pp. NA-NA
Author(s):  
Gabriel Micard ◽  
Giso Hahn ◽  
Barbara Terheiden ◽  
Daniel Chrastina ◽  
Giovanni Isella ◽  
...  

2006 ◽  
Vol 134 (2-3) ◽  
pp. 118-124 ◽  
Author(s):  
S. Pizzini ◽  
M. Acciarri ◽  
S. Binetti ◽  
D. Cavalcoli ◽  
A. Cavallini ◽  
...  

Author(s):  
Alim Mazinov ◽  
Andrey Tyutyunik ◽  
Vladimir Gurchenko

A method for obtaining nanostructured carbon and silicon powder materials is considered. Shown are micrographs of the obtained nanocrystalline silicon. The temperature dependences of the conductivity of nanocrystalline silicon, fullerene-containing material, and a silicon-carbon compound obtained by plasma-chemical synthesis are presented.


Vacuum ◽  
1999 ◽  
Vol 52 (1-2) ◽  
pp. 147-152 ◽  
Author(s):  
I Ferreira ◽  
B Fernandes ◽  
R Martins

Sign in / Sign up

Export Citation Format

Share Document