Fabrication of inverted pyramid structure for high-efficiency silicon solar cells using metal assisted chemical etching method with CuSO4 etchant

2021 ◽  
Vol 230 ◽  
pp. 111200
Author(s):  
Danni Zhang ◽  
Shuai Jiang ◽  
Ke Tao ◽  
Rui Jia ◽  
Huayun Ge ◽  
...  
2012 ◽  
Vol 101 (7) ◽  
pp. 073902 ◽  
Author(s):  
Kyungsun Ryu ◽  
Ajay Upadhyaya ◽  
Hyun-Jin Song ◽  
Chel-Jong Choi ◽  
Ajeet Rohatgi ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 459
Author(s):  
Yuchen Liu ◽  
Kousuo Dong ◽  
Linsheng Bian ◽  
Zisheng Guan

Inverted pyramid-texturing of silicon surface has been proven to have great application potential in silicon solar cells. In this paper, we utilized Ag-assisted chemical etching (Ag–ACE) technology combing with polyvinylpyrrolidone (PVP) to fabricate an inverted pyramid textured Si surface. We call it Ag@PVP–ACE. The effect of different experimental parameters on etching results was observed. We show that the microstructure of the Si surface exhibited two states as the concentration of NH4HF2 and PVP concentration changed: polishing and inverted pyramid texturing. Meanwhile, we found inverted pyramids easier to form at the high temperature and low H2O2 concentration of the etching system. Consequently, compared to inverted pyramid structures fabricated by nanostructure rebuilding (NSR) technology and Ag@PVP–ACE, we consider that Ag@PVP–ACE technology could become a viable strategy for fabricating inverted pyramid textured Si wafers in Si solar cells production.


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