Ga-doped Czochralski silicon with rear p-type polysilicon passivating contact for high-efficiency p-type solar cells

2021 ◽  
Vol 230 ◽  
pp. 111229
Author(s):  
Yuyan Zhi ◽  
Jingming Zheng ◽  
Mingdun Liao ◽  
Wei Wang ◽  
Zunke Liu ◽  
...  
2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.


2019 ◽  
Vol 8 (1) ◽  
Author(s):  
Sung Bum Kang ◽  
Ji-Hwan Kim ◽  
Myeong Hoon Jeong ◽  
Amit Sanger ◽  
Chan Ul Kim ◽  
...  

AbstractTransparent solar cells (TSCs) are emerging devices that combine the advantages of visible transparency and light-to-electricity conversion. Currently, existing TSCs are based predominantly on organics, dyes, and perovskites; however, the rigidity and color-tinted transparent nature of those devices strongly limit the utility of the resulting TSCs for real-world applications. Here, we demonstrate a flexible, color-neutral, and high-efficiency TSC based on a freestanding form of n-silicon microwires (SiMWs). Flat-tip SiMWs with controllable spacing are fabricated via deep-reactive ion etching and embedded in a freestanding transparent polymer matrix. The light transmittance can be tuned from ~10 to 55% by adjusting the spacing between the microwires. For TSCs, a heterojunction is formed with a p-type polymer in the top portion of the n-type flat-tip SiMWs. Ohmic contact with an indium-doped ZnO film occurs at the bottom, and the side surface has an Al2O3 passivation layer. Furthermore, slanted-tip SiMWs are developed by a novel solvent-assisted wet etching method to manipulate light absorption. Finite-difference time-domain simulation revealed that the reflected light from slanted-tip SiMWs helps light-matter interactions in adjacent microwires. The TSC based on the slanted-tip SiMWs demonstrates 8% efficiency at a visible transparency of 10% with flexibility. This efficiency is the highest among Si-based TSCs and comparable with that of state-of-the-art neutral-color TSCs based on organic–inorganic hybrid perovskite and organics. Moreover, unlike others, the stretchable and transparent platform in this study is promising for future TSCs.


APL Materials ◽  
2015 ◽  
Vol 3 (1) ◽  
pp. 016105 ◽  
Author(s):  
Hisham A. Abbas ◽  
Ranjith Kottokkaran ◽  
Balaji Ganapathy ◽  
Mehran Samiee ◽  
Liang Zhang ◽  
...  

2013 ◽  
Vol 284-287 ◽  
pp. 1168-1172
Author(s):  
Der Yuh Lin ◽  
Chao Yu Chi

We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4×1016cm-3and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.


2019 ◽  
Vol 2 (7) ◽  
pp. 4900-4906 ◽  
Author(s):  
Maulid M. Kivambe ◽  
Jan Haschke ◽  
Jörg Horzel ◽  
Brahim Aïssa ◽  
Amir A. Abdallah ◽  
...  

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