The paper is dedicated to the development of scintillating screens based on the single crystalline films of singly Tb3+ and doubly Tb3+–Ce3+ doped Gd1–xLuxAlO3 (x = 0–1) perovskites grown onto YAlO3 substrates using the liquid phase epitaxy method.
Vertical Ni NWs, inclined Ni NWs, and vertical Ni nanoplates were epitaxially grown on sapphire substrates with a single-crystalline structure in the vapor phase. The morphology and growth direction of Ni nanostructures are determined by Ni seed crystals.
1-12% {atomic ratio of In/(In+Sn)} indium-doped tin oxide (SnO2:In) films were successfully prepared on sapphire substrates by MOCVD method. HRTEM image showed that the obtained films were single crystalline films. The X-ray photoelectron spectroscopy showed the existence of non-stoichiometric oxide on the film surface. The Hall mobility and carrier concentration of the SnO2:In films varied with the In content increasing.
The study is dedicated to the development of scintillating screens for microimaging applications based on the single crystalline films of Eu3+-doped (Y,Lu,Gd,Tb)AlO3-mixed perovskites using the liquid phase epitaxy method.
Scintillating screens based on single crystalline films of Lu3Al5−xGaxO12:Pr garnet have been developed by the LPE method onto YAG substrates using BaO based flux.
X-Ray Diffraction Analyses of ZnO and (Zn, Mg)O Single Crystalline Films Epitaxially Grown on a-Plane Sapphire Substrates