Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

scholarly journals Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2146 ◽  
Author(s):  
Chayma Abed ◽  
Susana Fernández ◽  
Selma Aouida ◽  
Habib Elhouichet ◽  
Fernando Priego ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Thin Layers ◽  
Working Pressure ◽  
Hall Effect Measurements ◽  
Diffraction Patterns

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

Probing the significance of RF magnetron sputtering conditions on the physical properties of CdS thin films for ultra-thin CdTe photovoltaic applications

2021 ◽  
pp. 151640
Author(s):  
Latha Marasamy ◽  
Aruna-Devi Rasu Chettiar ◽  
Oscar Iván Domínguez Robledo ◽  
José Álvaro Chávez Carvayar ◽  
Nicolás Enrique Vázquez Barragán ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Rf Magnetron Sputtering ◽  
Photovoltaic Applications ◽  
Cds Thin Films

Incorporation of Ga in CIGS Absorber Layers Formed by RF-Magnetron Sputtering in Se Vapours

2008 ◽  
Vol 587-588 ◽  
pp. 323-327 ◽  
Author(s):  
Pedro M.P. Salomé ◽  
António F. da Cunha
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Depth Profiling ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Point Of View ◽  
Sputtering Deposition ◽  
Cell Parameters

Cu(In,Ga)Se2 (CIGS) thin film semiconductors are among the most attractive materials for thin film solar cell applications. Conversion efficiency exceeding 19% has been achieved for CIGS absorber layers deposited by three-stage co-evaporation technique. From a technological point of view the sputtering deposition process is more attractive than thermal co-evaporation, however, solar cell parameters obtained so far are worse. The highest efficiency value reported for co-sputtered CIS thin films is less than 8% and there is no data found for CIGS layers produced by a similar technique. We have developed a hybrid RF-magnetron sputtering/evaporation method for the deposition of the CIGS absorber layer. In this method Cu and In are sequentially sputtered from metallic targets in the presence of Se vapour. Ga depth profiling leads to a band gap grading which is known to play an important role in cell performance. Here, we report the results of our work on three different ways of Ga incorporation into the CIGS thin films. They consisted of sputtering from In-GaSe, Cu-GaSe composite targets and Ga evaporation. The Ga content and distribution across the layer thickness was investigated by AES measurements. The CIGS formation kinetics, structural and compositional studies were performed by SEM, XRD and AES measurements.

scholarly journals Effects of CdCl2Heat Treatment on the Qualities of CdS Thin Films Deposited by RF Magnetron Sputtering Technique

2011 ◽  
Vol 21 (9) ◽  
pp. 497-501
Author(s):  
Su-Young Choi ◽  
Seung-Ju Chun ◽  
Young-Hun Jung ◽  
Seung-Hun Lee ◽  
Soo-Hyun Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Cds Thin Films

scholarly journals Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3Thin Films Deposited by Magnetron Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Pengyi Zhao ◽  
Shuying Cheng
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Narrow Band ◽  
Rf Magnetron Sputtering ◽  
Optical And Electrical Properties ◽  
Electrical And Optical Properties ◽  
Photoelectric Properties ◽  
Sulfurization Temperature

Cu2SnS3is a narrow-band-gap semiconductor material. It has suitable optical and electrical properties which make it a potential absorber layer of solar cells. In this paper, Cu2SnS3thin films were successfully obtained by sulfurizing CuSnS2thin films deposited by RF magnetron sputtering at temperatures of 350–425°C for 2 h in an atmosphere of hydrogen sulfide and nitrogen. The influence of the sulfurization temperature on the electrical and optical properties of the Cu2SnS3thin films was investigated. The experimental results show that the Cu2SnS3thin films sulfurized at a temperature of 425°C exhibit better properties than others. The mobility and resistivity of the Cu2SnS3films are 9 cm2/V·s and 3 Ω·cm, respectively. And its optical band gap is estimated to be about 1.77 eV.

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