Hydrostatic pressure effect on the donor impurity states in asymmetric multiple quantum wells

2011 ◽  
Vol 49 (4) ◽  
pp. 365-372 ◽  
Author(s):  
Tianxing Wang ◽  
Zaiping Zeng ◽  
Congxin Xia ◽  
Shuyi Wei
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Pressure Effect ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Donor Impurity ◽  
Impurity States

scholarly journals Effect of interdiffusion and magnetic field on impurity states in multiple quantum wells

1899 ◽  
Author(s):  
V. L. Aziz Aghchegala ◽  
V. L. Aziz Aghchegala ◽  
V. N. Mughnetsyan ◽  
V. N. Mughnetsyan ◽  
A. A. Kirakosyan ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Impurity States

scholarly journals Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 191-196
Author(s):  
W. Shan ◽  
J.W. Ager ◽  
W. Walukiewicz ◽  
E.E. Haller ◽  
M.D. McCluskey ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Pressure Dependence ◽  
Applied Pressure ◽  
Mechanical Effect ◽  
Localized States ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
The Difference

The effect of hydrostatic pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied. Photoluminescence (PL) and photomodulated transmission (PT) measurements were performed under applied pressure to examine the pressure dependence of optical transitions associated with confined states in MQWs. The PL emission from the MQWs was found to shift linearly to higher energy with applied pressure but exhibit a significantly weaker pressure dependence compared to epilayer samples with similar bandgap energies. Similar pressure coefficients obtained by PT measurements rule out the possibility of PL resulting from deep localized states. We show that the difference in the compressibility of InGaN and of GaN induces a tensile strain in the compressively strained InGaN well layers that partially compensates the applied hydrostatic pressure. This mechanical effect is the primary factor for the smaller pressure dependence of the optical transitions in the InGaN/GaN MQWs. At pressure above 100 kbar, the PL signal in MQWs samples is quenched, indicating that the carriers involved in the radiative recombination processes in the well layers originate primarily from the adjacent GaN layers.

PseudomorphicIn0.17Ga0.83As/Al0.32Ga0.68As multiple quantum wells under hydrostatic pressure: Implications for band alignments

1992 ◽  
Vol 45 (11) ◽  
pp. 6031-6036 ◽  
Author(s):  
R. People ◽  
A. Jayaraman ◽  
S. K. Sputz ◽  
J. M. Vandenberg ◽  
D. L. Sivco ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Band Alignments

Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phonon Modes ◽  
Quantum Well Structure

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.

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