Effect of hydrostatic pressure on the donor impurity states in GaN/AlGaN asymmetric coupled quantum wells

2010 ◽  
Vol 405 (16) ◽  
pp. 3272-3275 ◽  
Author(s):  
Congxin Xia ◽  
Zaiping Zeng ◽  
Shuyi Wei
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Donor Impurity ◽  
Coupled Quantum Wells ◽  
Impurity States ◽  
Effect Of Hydrostatic Pressure

The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells

2021 ◽  
Vol 16 (1) ◽  
pp. 97-103
Author(s):  
Xin-Nan Li ◽  
Guang-Xin Wang ◽  
Xiu-Zhi Duan
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Variational Approach ◽  
Coupled Quantum Wells ◽  
Zinc Blende ◽  
Impurity Interaction ◽  
The Right ◽  
Peak Value

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

EFFECT OF HYDROSTATIC PRESSURE ON THE BINDING ENERGIES OF EXCITONS IN QUANTUM WELLS

2007 ◽  
Vol 21 (16) ◽  
pp. 2735-2747 ◽  
Author(s):  
G. J. ZHAO ◽  
X. X. LIANG ◽  
S. L. BAN
Keyword(s):  
Dielectric Constant ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Pressure Effect ◽  
Binding Energies ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Effective Masses ◽  
Finite Barrier ◽  
Effect Of Hydrostatic Pressure

The binding energies of excitons in finite barrier quantum wells under hydrostatic pressure are calculated by a variational method. The influences of hydrostatic pressure on the effective masses of the electron and hole, the dielectric constant, and the conduction band offset between the well and barriers are taken into account in the calculation. The numerical results for the GaAs/Al x Ga 1-x As and GaN/Al x Ga 1-x N quantum wells are given respectively. It is shown that the exciton binding energy increases linearly with the pressure and the pressure effect on arsenide quantum wells is more obvious than that on nitride ones. The exciton binding energies monotonically increase with increasing barrier height, which is related to the Al concentration of the barriers and the influence of the pressure.

scholarly journals Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

2020 ◽  
Vol 330 ◽  
pp. 01012
Author(s):  
Walid Belaid ◽  
Haddou El Ghazi ◽  
Izeddine Zorkani ◽  
Anouar Jorio
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Effective Mass ◽  
Variational Approach ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Coupled Quantum Wells ◽  
Surrounding Matrix ◽  
Main Effect ◽  
Good Agreement

In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.

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