Thermodynamic properties of cubic boron nitride under high pressure from ab initio calculations

2007 ◽  
Vol 141 (10) ◽  
pp. 577-581 ◽  
Author(s):  
Yun-Dong Guo ◽  
Xiao-Shu Song ◽  
Xi-Bo Li ◽  
Xiang-Dong Yang
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Thermodynamic Properties ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Cubic Boron Nitride

Systematics of elastic and thermodynamic properties of super-hardness cubic boron nitride under high pressure

2008 ◽  
Vol 17 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Yun Dong Guo ◽  
Xiang Dong Yang ◽  
Xi BO Li ◽  
Xiao Shu Song ◽  
Xin Lu Cheng
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Thermodynamic Properties ◽  
Cubic Boron Nitride

Thermal properties of molecular crystals through dispersion-corrected quasi-harmonic ab initio calculations: the case of urea

2016 ◽  
Vol 52 (9) ◽  
pp. 1820-1823 ◽  
Author(s):  
Alessandro Erba ◽  
Jefferson Maul ◽  
Bartolomeo Civalleri
Keyword(s):  
Thermal Properties ◽  
Thermodynamic Properties ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Molecular Crystals ◽  
Theoretical Framework

A multifaceted ab initio theoretical framework is presented for computing the thermal (structural, elastic, thermodynamic) properties of molecular crystals.

Effect of Al on the Formation of Cubic Boron Nitride Using Ni3Al Solvent under High Pressure

2007 ◽  
Vol 46 (11) ◽  
pp. 7388-7391 ◽  
Author(s):  
Yoichi Kubota ◽  
Kosuke Kosuda ◽  
Takashi Taniguchi
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Cubic Boron Nitride

Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

2002 ◽  
Vol 81 (22) ◽  
pp. 4145-4147 ◽  
Author(s):  
T. Taniguchi ◽  
K. Watanabe ◽  
S. Koizumi ◽  
I. Sakaguchi ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Single Crystals ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Cubic Boron Nitride ◽  
Self Organized ◽  
Bulk Single Crystals

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

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