scholarly journals STUDY OF STRUCTURE AND PROPERTIES OF SELF-FLUXING ALLOY AFTER MODIFYING WITH NANOSTRUCTURED AND MICRON-SIZED POWDERS OF CUBIC BORON NITRIDE AND HIGH PRESSURE AND HIGH TEMPERATURE TREATMENT

2019 ◽  
Vol 16 (2) ◽  
pp. 11-15
Author(s):  
V.T. Senyut ◽  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Structure And Properties

Core@shell nanocomposites Fe7C3 / FexOy /C obtained by high pressure-high temperature treatment of ferrocene Fe(C5H5)2

Carbon ◽  
2021 ◽  
Author(s):  
S.S. Starchikov ◽  
V.A. Zayakhanov ◽  
A.L. Vasiliev ◽  
I.S. Lyubutin ◽  
A.O. Baskakov ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Core Shell ◽  
High Pressure High Temperature

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

Phase transformations in solid C60 at high-pressure-high-temperature treatment and the structure of 3D polymerized fullerites

1996 ◽  
Vol 220 (1-3) ◽  
pp. 149-157 ◽  
Author(s):  
V.D. Blank ◽  
S.G. Buga ◽  
N.R. Serebryanaya ◽  
G.A. Dubitsky ◽  
S.N. Sulyanov ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Phase Transformations ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
High Pressure High Temperature

Synthesis, Structure and Dielectric Properties of Na2SnTeO6

1998 ◽  
Vol 547 ◽  
Author(s):  
J.-H. Park ◽  
P.M. Woodward ◽  
J.B. Parise ◽  
I. Lubomirsky ◽  
O. Stafsudd
Keyword(s):  
Dielectric Constant ◽  
High Pressure ◽  
High Temperature ◽  
Dielectric Properties ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Powder Diffraction Data ◽  
Ambient Conditions ◽  
X Ray ◽  
High Pressure High Temperature

AbstractA new perovskite was recovered from the high pressure-high temperature treatment of the α-TlSbO3 form of Na2SnTeO6 at 7 GPa and 950 °C for 30 minutes. Synchrotron x-ray powder diffraction data show the space group is P21/n with a=5.40361 (5), b=5.46152(5), c=7.69288(7) Å and ß=90.034(3)°. Using disk samples of both polymorphs, the dielectric properties were measured as a function of temperature. At ambient conditions, the perovskite form has a more than 1.5 fold enhancement in dielectric constant compared to the α-TlSbO3 form while the molar volume and the molecular polarizability decrease.

Superconductivity in SmFeAsO0.8F 0.2 Synthesized by High Pressure High Temperature Treatment

2011 ◽  
Vol 197-198 ◽  
pp. 499-502
Author(s):  
Zheng He Hua ◽  
Heng Zhang ◽  
Ju Peng
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Electrical Transport ◽  
Upper Critical Field ◽  
Magnetic Field Effect ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
X Ray Diffraction ◽  
High Pressure High Temperature ◽  
High Transition

Superconducting SmFeAsO0.8F0.2 compound was successfully synthesized by high pressure high temperature treatment with pressure of 6 G Pa at 1400 °C for 2 hours. The X-ray diffraction pattern of the sample indicates the formation of the tetragonal ZrCuSiAs-type SmFeAsO0.8F0.2 with lattice parameters a=3.932 Å and c=8.490 Å. The electrical transport study shows that the sample has a rather high transition temperature Tc of about 52 K, and magnetic field effect on the resistance reveals a rather high upper critical field HC2 of about 65 T.

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