Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices

2007 ◽  
Vol 201 (22-23) ◽  
pp. 9209-9214 ◽  
Author(s):  
I. Brunets ◽  
A.A.I. Aarnink ◽  
A. Boogaard ◽  
A.Y. Kovalgin ◽  
R.A.M. Wolters ◽  
...  
Keyword(s):  
Low Temperature ◽  
Memory Devices ◽  
Si Nanocrystals ◽  
Non Volatile Memory ◽  
Volatile Memory

Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices

2009 ◽  
Author(s):  
G. Tallarida ◽  
N. Huby ◽  
B. Kutrzeba-Kotowska ◽  
S. Spiga ◽  
M. Arcari ◽  
...  
Keyword(s):  
Low Temperature ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application

2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn
Keyword(s):  
Low Temperature ◽  
Si Nanoparticles ◽  
Non Volatile Memory ◽  
Amorphous Si ◽  
Volatile Memory ◽  
Low Temperature Process

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Fluorenone/carbazole based bipolar small molecules for non-volatile memory devices

2020 ◽  
Vol 78 ◽  
pp. 105584 ◽  
Author(s):  
Jia-Qin Yang ◽  
Li-Yu Ting ◽  
Ruopeng Wang ◽  
Jing-Yu Mao ◽  
Yi Ren ◽  
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Keyword(s):  
Small Molecules ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals Comparing domain wall synapse with other non volatile memory devices for on-chip learning in analog hardware neural network

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025111 ◽  
Author(s):  
Divya Kaushik ◽  
Utkarsh Singh ◽  
Upasana Sahu ◽  
Indu Sreedevi ◽  
Debanjan Bhowmik
Keyword(s):  
Neural Network ◽  
Domain Wall ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
On Chip ◽  
Hardware Neural Network

Graphene Based Non-Volatile Memory Devices

2014 ◽  
Vol 26 (31) ◽  
pp. 5496-5503 ◽  
Author(s):  
Xiaomu Wang ◽  
Weiguang Xie ◽  
Jian-Bin Xu
Keyword(s):  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory
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