Structure and optical properties of Cd-substituted ZnO (Zn1−x Cd x O) thin films synthesized by the dc reactive magnetron sputtering

Tantalum oxide (Ta2O5) thin films have been deposited on glass substrates and silicon wafers (100) by dc reactive magnetron sputtering and with a 99.995% pure tantalum target. The effect of the oxygen flow rate on the crystallinity and optical properties were investigated. The films were characterized by X-ray diffraction patterns, UV-Vis spectrophotometer and spectroscopic ellipsometry. The results show that the deposition rate of Ta2O5 thin films was decreased with the increase in oxygen flow rate. In addition, Ta2O5 thin films deposited at oxygen flow rate higher than 6 sccm could be exhibited sufficiently oxide thin film, the transmittance spectrum percentage indicated 80%, which corresponded to the obtained optical characteristic.

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Influence of Sputtering Power on Structural and Optical Properties of Ta2O5 Thin Films Prepared by DC Reactive Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.979.431 ◽

2014 ◽

Vol 979 ◽

pp. 431-434 ◽

Cited By ~ 1

Author(s):

Narong Sangwaranatee ◽

Mati Horprathum ◽

Jakrapong Kaewkhao

Keyword(s):

Thin Films ◽

Growth Rate ◽

Optical Properties ◽

Magnetron Sputtering ◽

Maximum Growth ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Structural And Optical Properties ◽

Sputtering Power ◽

Dc Reactive Magnetron Sputtering

In this article, amorphous tantalum oxide thin films were deposited by dc reactive magnetron sputtering onto silicon (001) wafer and glass slide substrates. Sputtering power has been varied for optimizing thin film quality. The structural and optical properties of the Ta2O5 thin films were investigated by using X-ray diffraction, UV-Vis spectrophotometer and spectroscopic ellipsometry respectively. The XRD pattern result indicates that the films are amorphous. It was found that the growth rate was also increased with increasing dc power up to 250 W, and the maximum growth rate observed at 250 W was 0.25 nm/s. In addition, the refractive index and packing density of the films increases with increasing dc sputtering power.

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Influence of Annealing Temperature on Microstructural and Optical Properties of TiN Thin Films Deposited by DC Reactive Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.770.197 ◽

2013 ◽

Vol 770 ◽

pp. 197-200

Author(s):

T. Rattana ◽

N. Witit-Anun ◽

S. Suwanboon ◽

S. Chaiyakun

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Annealing Temperature ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Annealing Temperatures ◽

Dc Reactive Magnetron Sputtering ◽

Spherical Structures ◽

Tin Thin Films

Polycrystalline TiN thin films were deposited on silicon and quartz substrates by DC reactive magnetron sputtering technique. The as-prepared thin films were annealed in air at various temperatures ranging between 400 °C to 700 °C. The effect of annealing temperatures on the microstructural and optical properties have been investigated by field emission scanning electron microscope, Raman scattering spectroscopy and UVVis spectrophotometer, respectively. The raman results indicated the presence of the rutile TiO2 phase for the samples annealed above 500°C. Many hollow-spherical structures appeared on the surface of films annealed at about 600 °C and the hollow-spherical structures occurred increasingly as a function of annealing temperatures. In addition, the optical properties of thin films depended strongly on annealing temperature.

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