The β to α phase transition of tantalum coatings deposited by modulated pulsed power magnetron sputtering

Delayed discharges due to electrical breakdown are observed in modulated pulsed pow er magnetron sputtering (MPPMS) plasma of titanium. The delayed discharge, which is remarkable with decreasing argon gas pressure, transforms the discharge current waveform from a standard modulated pulsed discharge current waveform to a comb-like discharge current waveform consisting of several pulses with high power. In addition, the delay times, consisting of statistical times and formative times in the delayed MPPMS discharges, are experimentally measured with the help of Laue plot analysis. The pressure dependence of delay times observed indicates that the delayed discharge behavior matches the breakdown characteristics well. In the present study, the delayed discharge dynamics of the comb-like discharge current waveform, which can be the origin of deep oscillation magnetron sputtering, are investigated based on measurement of the delay times and the characteristics of discharge current waveforms.

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Influence of modulation frequency on the synthesis of thin films in pulsed magnetron sputtering processes

Materials Science-Poland ◽

10.2478/msp-2018-0078 ◽

2018 ◽

Vol 36 (4) ◽

pp. 697-703 ◽

Cited By ~ 4

Author(s):

G.W. Strzelecki ◽

K. Nowakowska-Langier ◽

R. Chodun ◽

S. Okrasa ◽

B. Wicher ◽

...

Keyword(s):

Magnetron Sputtering ◽

Optical Emission Spectroscopy ◽

Film Growth ◽

Modulation Frequency ◽

Optical Emission ◽

Pulsed Power ◽

Additional Parameter ◽

The Impact ◽

Different Levels ◽

Pulsed Magnetron

AbstractThe research on the influence of modulation frequency on the properties of films synthesized using a unique pulsed power supply combined with a standard unbalanced circular magnetron was conducted in the process of pulsed magnetron sputtering (PMS). It was shown that by using different levels of modulation, the composition of plasma (measured by optical emission spectroscopy, OES) as well as film growth rate and morphology (observed with scanning electron microscope, SEM), can be changed. The impact of modulation is related to the used materials and gases and can vary significantly. It was concluded that modulation frequency can greatly influence the synthesis of materials and can be used as an additional parameter in PMS. Specific relations between modulation frequency and synthesized material require further investigation.

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Kondo scenario of the γ–α phase transition in single crystalline cerium thin films

npj Quantum Materials ◽

10.1038/s41535-020-0248-y ◽

2020 ◽

Vol 5 (1) ◽

Author(s):

Xie-Gang Zhu ◽

Yu Liu ◽

Ya-Wen Zhao ◽

Yue-Chao Wang ◽

Yun Zhang ◽

...

Keyword(s):

Thin Films ◽

Phase Transition ◽

Single Crystalline ◽

Α Phase

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DC Magnetron Sputtering Deposition of Room-Temperature Phase Transition Vanadium Oxide Film

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1053.332 ◽

2014 ◽

Vol 1053 ◽

pp. 332-336 ◽

Cited By ~ 1

Author(s):

Ya Qiao ◽

Yuan Lu ◽

Hua Yang ◽

Yong Shun Ling

Keyword(s):

Thin Film ◽

Phase Transition ◽

Magnetron Sputtering ◽

Vanadium Oxide ◽

Room Temperature ◽

Annealed Film ◽

Oxide Thin Film ◽

Temperature Phase ◽

Dc Magnetron Sputtering ◽

Main Component

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.

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