Morphological, electrical and optical properties of highly oriented undoped and doped zinc oxide and cadmium oxide films grown by atmospheric-pressure chemical vapor deposition

2013 ◽  
Vol 230 ◽  
pp. 245-253 ◽  
Author(s):  
Tomoaki Terasako ◽  
Yoshinori Ogura ◽  
Ken Ohmae ◽  
Shohei Fujimoto ◽  
Masakazu Yagi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Oxide Films ◽  
Cadmium Oxide ◽  
Chemical Vapor ◽  
Electrical And Optical Properties ◽  
Pressure Chemical

Electrical and Optical Properties of Indium Doped Zinc Oxide Films Prepared by Atmospheric Pressure Chemical Vapor Deposition

1992 ◽  
Vol 283 ◽  
Author(s):  
Jianhua Hu ◽  
Roy G. Gordon
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Electrical And Optical Properties ◽  
Visible Absorption ◽  
Zinc Oxide Films ◽  
Indium Doping ◽  
Pressure Chemical

ABSTRACTIndium doped zinc oxide films have been deposited from diethyl zinc, ethanol and trimethyl indium in the temperature range between 225°C and 450°C in a laminar flow atmospheric chemical vapor deposition reactor. Both doped and undoped films were crystalline. The doped films have electron density up to 9×1020 cm-3, conductivity up to 850 Ω-1cm-1, and mobility up to 8 cm2/Vs. The indium doping increases the average visible absorption from less than 1% to above 20%. The transparency and conductivity of indium doped zinc oxide films are lower than those of fluorine doped films.

Structural and surface analysis of Mo–W oxide films prepared by atmospheric pressure chemical vapor deposition

2007 ◽  
Vol 201 (22-23) ◽  
pp. 9378-9384 ◽  
Author(s):  
K.A. Gesheva ◽  
T. Ivanova ◽  
B. Marsen ◽  
B. Cole ◽  
E.L. Miller ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Analysis ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Pressure Chemical
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