Effects of Substrate on the Growth Characteristics of Silicon Oxide Films Deposited by Atmospheric Pressure Chemical Vapor Deposition Using Si (  OC 2 H 5 ) 4 and  O 3

1998 ◽  
Vol 145 (8) ◽  
pp. 2847-2853 ◽  
Author(s):  
M. Yoshimaru ◽  
T. Yoshie
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Growth Characteristics ◽  
Pressure Chemical

Structural and surface analysis of Mo–W oxide films prepared by atmospheric pressure chemical vapor deposition

2007 ◽  
Vol 201 (22-23) ◽  
pp. 9378-9384 ◽  
Author(s):  
K.A. Gesheva ◽  
T. Ivanova ◽  
B. Marsen ◽  
B. Cole ◽  
E.L. Miller ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Analysis ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films

1994 ◽  
Vol 343 ◽  
Author(s):  
David M. Hoffman ◽  
Lauren M. Atagi ◽  
Wei-Kan Chu ◽  
Jia-Rui Liu ◽  
Zongshuang Zheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Elastic Recoil ◽  
Pressure Chemical ◽  
Quartz Substrates ◽  
Tin Oxide Films

ABSTRACTDepositions of high quality SiO2 and SnO2 films from the reaction of homoleptic amido precursors M(NMe2)4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition reactor. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450 °C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 ± 5 atom °. They are deposited with growth rates from 380 to 900 Å/min. The refractive indexes of the SiO2 films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm−1. X-Ray diffraction studies reveal that the SiO2 film deposited at 350°C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO2 films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10−2 to 10−3 Ω cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350°C is crystalline cassitterite with some (101) orientation.

Atmospheric pressure chemical vapor deposition of electrochromic tungsten oxide films

2001 ◽  
Vol 392 (2) ◽  
pp. 231-235 ◽  
Author(s):  
Roy G. Gordon ◽  
Seán Barry ◽  
Jeffrey T. Barton ◽  
Randy N.R. Broomhall-Dillard
Keyword(s):  
Chemical Vapor Deposition ◽  
Tungsten Oxide ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Pressure Chemical
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