Composition and mechanical properties of B-C-W and B-C-Ti thin films prepared by pulse magnetron sputtering

2016 ◽  
Vol 308 ◽  
pp. 115-120 ◽  
Author(s):  
M. Friedemann ◽  
H. Klostermann
2009 ◽  
Vol 16 (4) ◽  
pp. 505-510 ◽  
Author(s):  
Bo-Huei Liao ◽  
Cheng-Chung Lee ◽  
Cheng-Chung Jaing ◽  
Ming-Chung Liu

2015 ◽  
Vol 18 (suppl 2) ◽  
pp. 30-34 ◽  
Author(s):  
Flávio Gustavo Ribeiro Freitas ◽  
Roberto Hübler ◽  
Gabriel Soares ◽  
Amanda Gardênia Santos Conceição ◽  
Edson Reis Vitória ◽  
...  

2019 ◽  
Vol 397 ◽  
pp. 118-124
Author(s):  
Linda Aissani ◽  
Khaoula Rahmouni ◽  
Laala Guelani ◽  
Mourad Zaabat ◽  
Akram Alhussein

From the hard and anti-corrosions coatings, we found the chromium carbides, these components were discovered by large studies; like thin films since years ago. They were pointed a good quality for the protection of steel, because of their thermal and mechanical properties for this reason, it was used in many fields for protection. Plus: their hardness and their important function in mechanical coatings. The aim of this work joins a study of the effect of the thermal treatment on mechanical and structural properties of the Cr/steel system. Thin films were deposited by cathodic magnetron sputtering on the steel substrates of 100C6, contain 1% wt of carbon. Samples were annealing in vacuum temperature interval between 700 to 1000 °C since 45 min, it forms the chromium carbides. Then pieces are characterising by X-ray diffraction, X-ray microanalysis and scanning electron microscopy. Mechanical properties are analysing by Vickers test. The X-ray diffraction analyse point the formation of the Cr7C3, Cr23C6 carbides at 900°C; they transformed to ternary carbides in a highest temperature, but the Cr3C2 doesn’t appear. The X-ray microanalysis shows the diffusion mechanism between the chromium film and the steel sample; from the variation of: Cr, Fe, C, O elements concentration with the change of annealing temperature. The variation of annealing temperature shows a clean improvement in mechanical and structural properties, like the adhesion and the micro-hardness.


2018 ◽  
Vol 24 (8) ◽  
pp. 5872-5876
Author(s):  
G Balakrishnan ◽  
V Sathiyaraj ◽  
M Dinesh ◽  
P. Naveen Chandran ◽  
C Thamotharan

In the present work, nanostructured tungsten nitride (WN) thin films were deposited by RF reactive magnetron sputtering technique in a mixture of N2 and Argon atmosphere and its microstructure and mechanical properties were investigated. The Argon pressure was kept constant at 20 sccm, while the N2 partial pressures were varied (3%, 5%, 10% and 15%). The WN thin films are deposited on SS304 stainless steel substrates at a temperature of 500 °C. The microstructural property was analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) and mechanical properties were evaluated by nanoindentation technique. The XRD studies indicated the formation of different phases as a function of nitrogen content. The hardness and the young’s modulus values were in the range 27–39 GPa and 239–280 GPa, respectively. The high hardness values correspond to the coatings with the low nitrogen content and vice-versa. The mechanical properties of the tungsten nitride coatings were strongly influenced by the microstructure.


Author(s):  
Kun-Hsien Lee ◽  
Chia-Chen Lee ◽  
Chien-Jen Tang ◽  
Cheng-Chung Jaing ◽  
His-Chao Chen ◽  
...  

2014 ◽  
Vol 951 ◽  
pp. 104-108
Author(s):  
Xing Fa Zi ◽  
Rui Ming Liu ◽  
Qing Ye ◽  
Xin Zhu Shu

N-doped Cu2O (Cu2O:N) thin films were deposited on glass substrate by reactive pulse magnetron sputtering method using Cu target. Crystalline phases of thin films were controlled by adjusting N2/ O2flow rate ratio and sputtering power precisely during the sputtering process, and the single phase of Cu2O(111) thin films were obtained at room temperature. The thin films deposited at different sputtering powers were characteristics of 2D growth and the root mean square (RMS) of surface roughness of thin films gradually increased with the increasing of sputtering power. The optical band gap (Eg) of thin films were in the range 2.18-2.35 eV, and slightly decreased with increasing of sputtering power from 45 W to 90 W.


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