Numerical Study on Effect of Non-uniform CMAS Penetration on TGO Growth and Interface Stress Behavior of APS TBCs

The penetration of CaO–MgO–Al2O3–SiO2 (CMAS) is one of the most significant factors that induce the failure of air-plasma-sprayed thermal barrier coatings (APS TBCs). The direct penetration of CMAS changes the thermal/mechanical properties of the top coat (TC) layer, which affects the thermal mismatch stress behavior and the growth of thermally grown oxide (TGO) at the TC/bond coat (BC) interface, thereby resulting in a more complicated interface stress state. In the present study, a two-dimensional global model of APS TBCs with half of the TC layer penetrated by CMAS is established to investigate the effect of non-uniform CMAS penetration on the interface stress behavior. Subsequently, a local model extracted from the global model is established to investigate the effects of interface morphologies and CMAS penetration depth. The results show that non-uniform CMAS penetration causes non-uniform TGO growth in APS TBCs, which consequently causes the stress behavior to vary along the interface. Furthermore, the CMAS penetration depth imposes a significant effect on the TC/TGO interface stress behavior, whereas the interface roughness exerts a prominent effect on the stress level at the BC/TGO interface under CMAS penetration. This study reveals the mechanism associated with the effect of non-uniform CMAS penetration on the interface stress behavior in APS TBCSs.

Effects of static load and residual stress on fused silica direct bonding interface properties

Defect free direct bonding of rigid and large area glass samples, such as prisms, becomes increasingly important for the manufacturing of modern optical and optomechanical components. Typically, in order to apply a static load during the annealing step, specialized heat-resistant pressure mountings are required. This makes manufacturing effortful and cost-intensive. In this paper, we present plasma activated bonding experiments conducted on fused silica plates where residual stress has been introduced prior to the contacting step and where annealing is performed with and without a static load. We find that in case of a sufficiently smooth surface, bonding strength is insensitive towards residual stress or static load, or more precisely, towards the interface stress. Furthermore, the residual Fresnel reflection losses of the realized bonding interface were optically measured and they amount to only $$10^{-6}$$ 10 - 6 . We propose that a consideration of the change in Gibbs free energy, dG, allows qualitatively predicting the resulting bonding strength and its spatial distribution, where dG is determined by surface energy and interface stress. At the end of this article, conceivable applications are discussed.

Revealing molecular conformation–induced stress at embedded interfaces of organic optoelectronic devices by sum frequency generation spectroscopy

Interface stresses are pervasive and critical in conventional optoelectronic devices and generally lead to many failures and reliability problems. However, detection of the interface stress embedded in organic optoelectronic devices is a long-standing problem, which causes the unknown relationship between interface stress and organic device stability (one key and unsettled issue for practical applications). In this study, a kind of previously unknown molecular conformation–induced stress is revealed at the organic embedded interface through sum frequency generation (SFG) spectroscopy technique. This stress can be greater than 10 kcal/mol per nm2 and is sufficient to induce molecular disorder in the organic semiconductor layer (with energy below 8 kcal/mol per nm2), finally causing instability of the organic transistor. This study not only reveals interface stress in organic devices but also correlates instability of organic devices with the interface stress for the first time, offering an effective solution for improving device stability.