Heteroepitaxial growth and microwave plasma annealing of DC reactive sputtering deposited TiZrN film on Si (100)

2020 ◽  
Vol 394 ◽  
pp. 125873 ◽  
Author(s):  
Kun-An Chiu ◽  
Chia-Wei Fu ◽  
Yu-Siang Fang ◽  
Thi Hien Do ◽  
Fu-Han Shih ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Reactive Sputtering ◽  
Heteroepitaxial Growth ◽  
Plasma Annealing

Improvements on Electrical Properties of Ultra-Thin Silicon Oxides Grown by Microwave Afterglow Oxygen Plasma

1994 ◽  
Vol 347 ◽  
Author(s):  
P. C. Chen ◽  
J. Y. Lin ◽  
H. L. Hwang
Keyword(s):  
Microwave Plasma ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Breakdown Field ◽  
Silicon Oxides ◽  
Oxide Breakdown ◽  
Thin Silicon ◽  
State Densities ◽  
Plasma Annealing

ABSTRACTFundamental characteristics such as the oxide breakdown fields, oxide charges and interface state density of various ultra-thin silicon oxides (≤ 8 nm) grown by microwave plasma afterglow oxidation at low temperatures (400 °C and 600 °C) were investigated. The effective Oxide charge density of 600 °C as-grown oxide was as low as 6×1010 cm-2. The breakdown fields of the oxides were further enhanced and the interface state densities were reduced by employing fluorination (HF soaked) and low temperature N2O plasma annealing. The breakdown field of the thin oxide grown at 600 °C with 15 min N2O plasma annealing was 12 MV/cm. The reduction of interface state density was about 35% for 600 °C fluorinated oxide. When integrated with poly-gate process, the interface state density was as low as 5×1010 cm-2eV-1.

Heteroepitaxial Growth of Diamond on 3C-SiC/Si Substrates by Antenna-Edge Microwave Plasma CVD

2015 ◽  
Author(s):  
T. Suto ◽  
J. Yaita ◽  
T. Iwasaki ◽  
M. Natal ◽  
S.E. Saddow ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Heteroepitaxial Growth ◽  
Plasma Cvd ◽  
Si Substrates ◽  
Microwave Plasma Cvd

Processing and Characterization of CVD c-BN Films and c-BN/Diamond Bilayers

2002 ◽  
Vol 750 ◽  
Author(s):  
Tien-Syh Yang ◽  
Jong-Bin Cheng ◽  
Ming-Show Wong
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
Substrate Bias ◽  
Heteroepitaxial Growth ◽  
Substrate Bias Voltage ◽  
Pulsed Dc ◽  
Argon Mixture ◽  
Peeling Off

ABSTRACTThe paper reports the syntheses of c-BN films by the reaction of B2H6 and NH3 in the hydrogen and argon mixture using microwave plasma-assisted chemical vapor deposition (MPCVD). The effects of NH3/B2H6 ratios, hydrogen addition, pulsed-DC substrate-bias voltage and diamond as bufferlayer on the formation of c-BN were investigated. As-grown films are characterized by FTIR, grazing-incidence XRD, and SEM. The NH3/ B2H6 = 3 was selected to obtain a better crystallized BN films with moderate deposition rate. When the hydrogen content was at 85 vol.% in the gas mixture and the substrate bias at −200 V, the maximum c-BN content about 65 % was obtained. However, the film was easily cracked in a few hours. The film deposited at lower substrate biasing of −100 V could preserve for a few days without peeling off, although it had lower c-BN content about 40 %. Nanocrystalline diamond film, deposited from 1 vol.% CH4/Ar plasma, as bufferlayer can promote the heteroepitaxial growth of c-BN, resulting in 80 % c-BN content. The c-BN/diamond bilayer were adherent with a total thickness of 1.2 μm.

Heteroepitaxial Growth of Yttria-Stabilized Zirconia Film on Silicon by Reactive Sputtering

1995 ◽  
Vol 34 (Part 1, No. 4A) ◽  
pp. 1942-1946 ◽  
Author(s):  
Susumu Horita ◽  
Masakazu Murakawa ◽  
\ast ◽  
Takaharu Fujiyama ◽  
\ast
Keyword(s):  
Reactive Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Heteroepitaxial Growth ◽  
Stabilized Zirconia ◽  
Zirconia Film

Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition

2000 ◽  
Vol 9 (7) ◽  
pp. 1380-1387 ◽  
Author(s):  
Toshiki Tsubota ◽  
Masanari Ohta ◽  
Katsuki Kusakabe ◽  
Shigeharu Morooka ◽  
Midori Watanabe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth

Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

2003 ◽  
Vol 83 (9) ◽  
pp. 1743-1745 ◽  
Author(s):  
Y. B. He ◽  
W. Kriegseis ◽  
B. K. Meyer ◽  
A. Polity ◽  
M. Serafin
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Heteroepitaxial Growth ◽  
Cuins2 Thin Films

Modeling and validation of uniform large-area optical coating deposition on a rotating drum using microwave plasma reactive sputtering

2016 ◽  
Vol 56 (4) ◽  
pp. C65 ◽  
Author(s):  
Cheng Li ◽  
Shigeng Song ◽  
Des Gibson ◽  
David Child ◽  
Hin on Chu ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Reactive Sputtering ◽  
Rotating Drum ◽  
Optical Coating ◽  
Large Area ◽  
Coating Deposition

Heteroepitaxial growth of diamond on c-BN in a microwave plasma

1994 ◽  
Vol 3 (4-6) ◽  
pp. 398-402 ◽  
Author(s):  
H. Maeda ◽  
S. Masuda ◽  
K. Kusakabe ◽  
S. Morooka
Keyword(s):  
Microwave Plasma ◽  
Heteroepitaxial Growth

Heteroepitaxial growth of diamond films on 3C-SiC/Si substrates with utilization of antenna-edge microwave plasma CVD for nucleation

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DH13 ◽  
Author(s):  
Junya Yaita ◽  
Takayuki Iwasaki ◽  
Meralys Natal ◽  
Stephen E. Saddow ◽  
Mutsuko Hatano
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Heteroepitaxial Growth ◽  
Plasma Cvd ◽  
Si Substrates ◽  
Microwave Plasma Cvd
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