Reaction Mode-Controlled Crystal Structure and Optical and Electrical Properties of SnOx Infrared Transparent Conducting Films

Author(s):  
Liangge Xu ◽  
Zhenhuai Yang ◽  
Zhibo Zhang ◽  
Lei Yang ◽  
Fei Xia ◽  
...  
2014 ◽  
Vol 893 ◽  
pp. 558-561
Author(s):  
Feng Ji ◽  
Xue Zhang ◽  
Chang Lv ◽  
Zhen Tai Hou

High quality crystalline zinc-stannate transparent conducting films were successfully prepared on sapphire substrates by MOCVD method. ZnSnO films with the proportions of tin and zinc from 1: 1 to 1:20 were prepared and ZnSnO3films were obtained when the proportion is 1:1. The structural, optical and electrical properties of zinc-stannate films were investigated.


2019 ◽  

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.


2011 ◽  
Vol 32 (4) ◽  
pp. 307-312
Author(s):  
吕有明 LV You-ming ◽  
曹培江 CAO Pei-jiang ◽  
贾芳 JIA Fang ◽  
柳文军 LIU Wen-jun ◽  
朱德亮 ZHU De-liang ◽  
...  

2014 ◽  
Vol 35 (4) ◽  
pp. 393-398
Author(s):  
宋秋明 SONG Qiu-ming ◽  
吕明昌 LYU Ming-chang ◽  
谭兴 TAN Xing ◽  
张康 ZHANG Kang ◽  
杨春雷 YANG Chun-lei

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