Structural, morphological, optical and electrical properties of Ga-doped ZnO transparent conducting thin films

2017 ◽  
Vol 421 ◽  
pp. 446-452 ◽  
Author(s):  
Jiao Yang ◽  
Yiling Jiang ◽  
Linjie Li ◽  
Meizhen Gao
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Transparent Conducting ◽  
Doped Zno

Samarium-doped ZnO thin films synthesized by Sol-gel: Structural, optical and electrical properties

2021 ◽  
Vol 126 ◽  
pp. 105648
Author(s):  
Edgar R. López-Mena ◽  
Sergio J. Jiménez-Sandoval ◽  
Omar Jiménez-Sandoval
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Doped Zno

Effect of O2partial pressure on optical and electrical properties in Al doped ZnO thin films

2014 ◽  
Vol 29 (5) ◽  
pp. 275-280 ◽  
Author(s):  
P. J. Cao ◽  
W. J. Liu ◽  
F. Jia ◽  
Y. X. Zeng ◽  
D. L. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Doped Zno

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

Optical and Electrical Properties of Heavy-doped AZO Transparent Conducting Thin Films

2011 ◽  
Vol 32 (4) ◽  
pp. 307-312
Author(s):  
吕有明 LV You-ming ◽  
曹培江 CAO Pei-jiang ◽  
贾芳 JIA Fang ◽  
柳文军 LIU Wen-jun ◽  
朱德亮 ZHU De-liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Transparent Conducting

Tuning of optical and electrical properties of transparent conducting AgInO2 thin films by compositional variations

2020 ◽  
Vol 3 (5) ◽  
pp. 649-654
Author(s):  
Merin Tomy ◽  
Chinnu Esthan ◽  
D. Ardra ◽  
K. Keerthi ◽  
Rachel Reena Philip
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Transparent Conducting ◽  
Compositional Variations
Sign in / Sign up

Export Citation Format

Share Document