scholarly journals Toward energy-efficient physical vapor deposition: Mapping out the effects of W+ energy and concentration on the densification of TiAlWN thin films grown with no external heating

Author(s):  
X. Li ◽  
B. Bakhit ◽  
M.P. Johansson Jõesaar ◽  
I. Petrov ◽  
L. Hultman ◽  
...  
2018 ◽  
Vol 2 (1) ◽  
pp. 586-597 ◽  
Author(s):  
Tianxing Ma ◽  
Michael P. Nitzsche ◽  
Arielle R. Gamboa ◽  
Valeria Saro-Cortes ◽  
Jonathan P. Singer

2012 ◽  
Vol 177 (1) ◽  
pp. 117-120 ◽  
Author(s):  
J.Q. Xu ◽  
T. Mori ◽  
Y. Bando ◽  
D. Golberg ◽  
D. Berthebaud ◽  
...  

2021 ◽  
Author(s):  
J. Cruz-Gomez ◽  
E. Hernandez-Cantero ◽  
D. Santos-Cruz ◽  
S.A. Mayen-Hernandez ◽  
F. DeMoure-Flores ◽  
...  

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.


2019 ◽  
Vol 293 ◽  
pp. 83-95
Author(s):  
Marek Szindler

The use of thin films in optoelectronic and photovoltaic devices is aimed at improving the physical properties of the substrate material. The modification of the surface of the silicon substrate is thus one of the greatest challenges in research on photovoltaic materials, in order to achieve even greater efficiency or better adapt their properties depending on the application. The technologies of applying layers vary depending on the effect to be obtained and the material from which the layer is formed. In practice, the most common method is chemical vapor deposition and physical vapor deposition, and the most commonly applied optical materials are SiO2, TiO2 and Si3N4.This paper presents the results of investigations on morphology and optical properties of the prepared aluminium oxide thin films. Thin films were prepared with use of sol-gel spin coating method. Surface morphology studies were carried out using an atomic force microscope. To characterize the surface of the thin films, 3D images and histograms of the frequency of individual inequalities were made. In order to characterize the optical properties of Al2O3 thin films, the reflectance and light transmission tests were performed using a spectrophotometer. Optical constants were determined using a spectroscopic ellipsometer. Results and their analysis show that the sol-gel method allows the deposition of homogenous thin films of Al2O3 with the desired geometric characteristics and good optical properties. Uniform, continuous thin layers with a roughness not exceeding a few nanometres were deposited. Their deposition enabled to reduce the reflection of light from the polished substrate below 15% in a wide range (425-800nm) while maintaining high transparencies (over 90%). The obtained results causes that mentioned thin films are good potential material for optics, optoelectronics and photovoltaics.


2005 ◽  
Vol 482 (1-2) ◽  
pp. 192-196 ◽  
Author(s):  
F. Tétard ◽  
P. Djemia ◽  
M.P. Besland ◽  
P.Y. Tessier ◽  
B. Angleraud

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