Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

2007 ◽  
Vol 601 (19) ◽  
pp. L120-L123 ◽  
Author(s):  
R.P. Bhatta ◽  
B.D. Thoms ◽  
M. Alevli ◽  
N. Dietz
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Chemical Vapor ◽  
Surface Electron ◽  
Electron Accumulation ◽  
Pressure Chemical ◽  
Nitride Layers

Characterization of InN layers grown by high-pressure chemical vapor deposition

2006 ◽  
Vol 89 (11) ◽  
pp. 112119 ◽  
Author(s):  
M. Alevli ◽  
G. Durkaya ◽  
A. Weerasekara ◽  
A. G. U. Perera ◽  
N. Dietz ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

APL Materials ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 046105 ◽  
Author(s):  
Xiaoyu Ji ◽  
Hiu Yan Cheng ◽  
Alex J. Grede ◽  
Alex Molina ◽  
Disha Talreja ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Conformal Coating ◽  
Pressure Chemical ◽  
Silicon And Germanium

High-pressure chemical vapor deposition for preparation of carbon

Carbon ◽  
1995 ◽  
Vol 33 (2) ◽  
pp. 183-191 ◽  
Author(s):  
N. Nakao ◽  
K. Kitagawa ◽  
M. Sasaki ◽  
T. Hirai
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical

Three-Dimensional Modeling of the High Pressure Organometallic Chemical Vapor Deposition of InN using Trimethylindium and Ammonia

2001 ◽  
Vol 693 ◽  
Author(s):  
Sonya D. McCall ◽  
Klaus J. Bachmann
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Three Dimensional Modeling ◽  
Elevated Pressures ◽  
Hard Shell ◽  
Organometallic Chemical Vapor Deposition

AbstractA physico-chemical model of the High Pressure Organometallic Chemical Vapor Deposition (HPOMCVD) process that describes three dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors is presented. A reduced-order model of the Organometallic Chemical Vapor Deposition of indium nitride (InN) from trimethylindium In(CH3)3 or TMI and ammonia (NH3) at elevated pressures has been developed and tested using the computational fluid dynamics code, CFD-ACE+. The model describes the flow dynamics coupled to chemical reactions and transport in the flow channel of the Compact Hard Shell Reactor, as a function of substrate temperature, total pressure and centerline flow velocity.

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