Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation

2009 ◽  
Vol 603 (3) ◽  
pp. 498-502 ◽  
Author(s):  
P. Tomkiewicz ◽  
S. Arabasz ◽  
B. Adamowicz ◽  
M. Miczek ◽  
J. Mizsei ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Electronic Properties ◽  
Surface Photovoltage

Investigation of Electronic Properties of Porous Silicon by the Pulsed Surface Photovoltage Technique

1994 ◽  
Vol 358 ◽  
Author(s):  
Th. Dittrich ◽  
H. Flietner
Keyword(s):  
Porous Silicon ◽  
Electronic Properties ◽  
Electronic States ◽  
Surface Photovoltage

ABSTRACTElectronic states in por-Si are investigated by the pulsed surface photovoltage technique using the por-Si/c-Si interface as probe. The values of the potentials at the por-Si/n-Si and at the por-Si/p-Si interface are -0.05 V and +0.47 V, respectively. Non-monotonous photovoltage transients related to trapping in por-Si are observed. The traps can be annealed at 150°C and generated in H20 atmosphere.

Range of validity of the surface‐photovoltage diffusion length measurement: A computer simulation

1988 ◽  
Vol 64 (3) ◽  
pp. 1254-1265 ◽  
Author(s):  
P. J. McElheny ◽  
J. K. Arch ◽  
H.‐S. Lin ◽  
S. J. Fonash
Keyword(s):  
Computer Simulation ◽  
Diffusion Length ◽  
Length Measurement ◽  
Surface Photovoltage

Unraveling the Electronic Properties of Lead Halide Perovskites with Surface Photovoltage in Photoemission Studies

2019 ◽  
Vol 11 (24) ◽  
pp. 21578-21583 ◽  
Author(s):  
Fengshuo Zu ◽  
Christian M. Wolff ◽  
Maryline Ralaiarisoa ◽  
Patrick Amsalem ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Photovoltage ◽  
Halide Perovskites ◽  
Lead Halide

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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