scholarly journals Application of computer simulation for research of spatial structure, growth, and electronic properties of zero-dimensional structures on example of silicon-niobium anionic clusters

2019 ◽  
Vol 1203 ◽  
pp. 012056
Author(s):  
N A Borshch ◽  
N S Pereslavtseva ◽  
S I Kurganskii
Keyword(s):  
Computer Simulation ◽  
Spatial Structure ◽  
Electronic Properties ◽  
Anionic Clusters

Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation

2009 ◽  
Vol 603 (3) ◽  
pp. 498-502 ◽  
Author(s):  
P. Tomkiewicz ◽  
S. Arabasz ◽  
B. Adamowicz ◽  
M. Miczek ◽  
J. Mizsei ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Electronic Properties ◽  
Surface Photovoltage

scholarly journals Graphic-analytical model of cultivation garden in Suzhou. Generation of planning structures with Rhinoceros (Grasshopper)

2021 ◽  
Vol 23 (1) ◽  
pp. 58-72
Author(s):  
D. S. Tceluiko
Keyword(s):  
Computer Simulation ◽  
Structural Analysis ◽  
Spatial Structure ◽  
Analytical Model ◽  
Visual Representation ◽  
Generative Design ◽  
Historical Objects ◽  
Integral Structure ◽  
Definition Of ◽  
Tools And Techniques

The paper explores the mechanisms of digital imitation of traditional tools for designing private gardens in China, the Cultivation Garden in Suzhou, in particular. New graphic-analytical model is proposed. Various approaches are considered for space as an integral structure. Both domestic and foreign literature in the field is investigated, and mathematical tools are selected to analyze the planning structure. The graphical definition of the architecture is given, the areas of its application are considered. An analogy is drawn between the graphicanalytical model and traditional Chinese tools and techniques for the space formation. The graphic-analytical model of the Cultivation Garden is proposed and investigated, and new planning schemes are then suggested. The relevance of the work lies in the use of new tools and techniques for analyzing the spatial structure of historical objects and new design solutions. The aim of this work is to study the graphic-analytical model of the Cultivation Garden, describe the main stages of its development.The following approaches are used: the analysis of the literature in the field; photographs and measurements of the Cultivation Garden; computer simulation; digital structural analysis; generative design method.The generating mechanism in the form of a script in Rhinoceros (Grasshopper) is examined in detail. The process of creating a garden plan is shown. The analysis and generation tool are given together with their disadvantages. A further research into finalization of the script is required for visual representation of the results obtained.

scholarly journals Computer simulation of the spatial structure of MUC 1 peptides capable of inhibiting apoptosis

2016 ◽  
Vol 19 (6) ◽  
pp. 731-737
Author(s):  
N. V. Ivanisenko ◽  
I. N. Lavrik ◽  
V. A. Ivanisenko
Keyword(s):  
Computer Simulation ◽  
Spatial Structure

scholarly journals Transformation from paper pattern to spatial structure of dress by computer - Simulation of sewing and dressing.

1988 ◽  
Vol 44 (3) ◽  
pp. 129-136 ◽  
Author(s):  
Hidehiko Okabe ◽  
Haruki Imaoka ◽  
Atsuo Shibuya ◽  
Hitoshi Akami ◽  
Noboru Aisaka ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Spatial Structure

Observations of the spatial structure of interstellar hydrogen

1967 ◽  
Vol 31 ◽  
pp. 45-46
Author(s):  
Carl Heiles
Keyword(s):  
High Resolution ◽  
Spatial Structure ◽  
Velocity Dispersion ◽  
Temperature Variations

High-resolution 21-cm line observations in a region aroundlII= 120°,b11= +15°, have revealed four types of structure in the interstellar hydrogen: a smooth background, large sheets of density 2 atoms cm-3, clouds occurring mostly in groups, and ‘Cloudlets’ of a few solar masses and a few parsecs in size; the velocity dispersion in the Cloudlets is only 1 km/sec. Strong temperature variations in the gas are in evidence.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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