A first-principles study of O2 incorporation and its diffusion in compressively strained high-density silicon oxides

2006 ◽  
Vol 508 (1-2) ◽  
pp. 311-314 ◽  
Author(s):  
Toru Akiyama ◽  
Keiichi Kawamoto ◽  
Hiroyuki Kageshima ◽  
Masashi Uematsu ◽  
Kohji Nakamura ◽  
...  
1998 ◽  
Vol 05 (01) ◽  
pp. 77-80 ◽  
Author(s):  
Young-Jo Ko ◽  
K. J. Chang ◽  
Jae-Yel Yi ◽  
Seong-Ju Park ◽  
El-Hang Lee

We study the mechanism of the As-mediated epitaxial growths of Ge and Si on Si(100) surfaces through first-principles pseudopotential calculations. On an As-monolayer-covered Si(100) surface, individual Ge or Si adatoms are found to incorporate rapidly into subsurface As sites with minimum surface diffusion. The segregation of As is initiated by the substitutional adsorptions of individual Ge or Si adatoms. Because of the rapid adatom incorporation, adatom mobility is drastically reduced, compared with the growth without surfactants, resulting in a high density of two-dimensional islands. The inclusion of gradient corrections to the LDA energies does not change our results.


2008 ◽  
Vol 2 (11) ◽  
pp. 1427-1435 ◽  
Author(s):  
Yasutomo UETSUJI ◽  
Hwishim HWANG ◽  
Kazuyoshi TSUCHIYA ◽  
Eiji NAKAMACHI

2020 ◽  
Vol 22 (36) ◽  
pp. 20914-20921 ◽  
Author(s):  
Rajmohan Muthaiah ◽  
Jivtesh Garg

We report novel pathways to significantly enhance the thermal conductivity at nanometer length scales in boron phosphide through biaxial strain.


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