Electrical properties/Doping efficiency of doped microcrystalline silicon layers prepared by hot-wire chemical vapor deposition

P. Kumar; B. Schroeder

doi:10.1016/j.tsf.2007.06.035

Electrical properties/Doping efficiency of doped microcrystalline silicon layers prepared by hot-wire chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2007.06.035 ◽

2008 ◽

Vol 516 (5) ◽

pp. 580-583 ◽

Cited By ~ 10

Author(s):

P. Kumar ◽

B. Schroeder

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Microcrystalline Silicon

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Comparative studies of structural and electrical properties of doped microcrystalline silicon thin films deposited by hot-wire chemical vapor deposition

2008 33rd IEEE Photovolatic Specialists Conference ◽

10.1109/pvsc.2008.4922565 ◽

2008 ◽

Author(s):

P. Kumar ◽

B. Schroeder

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Comparative Studies ◽

Chemical Vapor ◽

Hot Wire ◽

Microcrystalline Silicon ◽

Silicon Thin Films ◽

Structural And Electrical Properties

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Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.1555680 ◽

2003 ◽

Vol 93 (7) ◽

pp. 3776-3783 ◽

Cited By ~ 84

Author(s):

Daxing Han ◽

Keda Wang ◽

Jessica M. Owens ◽

Lynn Gedvilas ◽

Brent Nelson ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Optoelectronic Properties ◽

Hot Wire ◽

Microcrystalline Silicon

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The role of hydrogen dilution of silane and phosphorus doping on hydrogenated microcrystalline silicon (μc-Si:H) films prepared by hot-wire chemical vapor deposition (HW-CVD) technique

Thin Solid Films ◽

10.1016/s0040-6090(01)01269-x ◽

2001 ◽

Vol 395 (1-2) ◽

pp. 206-212 ◽

Cited By ~ 23

Author(s):

S.R Jadkar ◽

J.V Sali ◽

M.G Takwale ◽

D.V Musale ◽

S.T Kshirsagar

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Microcrystalline Silicon ◽

Phosphorus Doping ◽

Hydrogen Dilution

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Low Temperature Microcrystalline Silicon Solar Cells Prepared by Hot-Wire Chemical Vapor Deposition

2006 IEEE 4th World Conference on Photovoltaic Energy Conference ◽

10.1109/wcpec.2006.279800 ◽

2006 ◽

Cited By ~ 1

Author(s):

M.M. Adachi ◽

W.f.l. Tse ◽

K.S. Karim

Keyword(s):

Solar Cells ◽

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Solar Cells ◽

Hot Wire ◽

Microcrystalline Silicon

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Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2005.07.134 ◽

2006 ◽

Vol 501 (1-2) ◽

pp. 102-106 ◽

Cited By ~ 9

Author(s):

T. Daimaru ◽

A. Tabata ◽

T. Mizutani

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Hot Wire ◽

Microcrystalline Silicon ◽

Flow Rates ◽

Silicon Thin Films ◽

Gas Pressures

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Highly transparent microcrystalline silicon carbide grown with hot wire chemical vapor deposition as window layers in n-i-p microcrystalline silicon solar cells

Applied Physics Letters ◽

10.1063/1.2739335 ◽

2007 ◽

Vol 90 (20) ◽

pp. 203502 ◽

Cited By ~ 34

Author(s):

Y. Huang ◽

A. Dasgupta ◽

A. Gordijn ◽

F. Finger ◽

R. Carius

Keyword(s):

Silicon Carbide ◽

Solar Cells ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Solar Cells ◽

Hot Wire ◽

Microcrystalline Silicon

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Amorphous and microcrystalline silicon deposited by hot-wire chemical vapor deposition at low substrate temperatures: application to devices and thin-film microelectromechanical systems

Thin Solid Films ◽

10.1016/s0040-6090(01)01222-6 ◽

2001 ◽

Vol 395 (1-2) ◽

pp. 105-111 ◽

Cited By ~ 21

Author(s):

J.P Conde ◽

P Alpuim ◽

M Boucinha ◽

J Gaspar ◽

V Chu

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microelectromechanical Systems ◽

Chemical Vapor ◽

Hot Wire ◽

Microcrystalline Silicon ◽

Substrate Temperatures

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Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(99)00757-9 ◽

2000 ◽

Vol 360 (1-2) ◽

pp. 205-212 ◽

Cited By ~ 15

Author(s):

M. Zhu ◽

X. Guo ◽

G. Chen ◽

H. Han ◽

M. He ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Microcrystalline Silicon ◽

Silicon Thin Films

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Doping of amorphous and microcrystalline silicon films deposited at low substrate temperatures by hot-wire chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1385910 ◽

2001 ◽

Vol 19 (5) ◽

pp. 2328-2334 ◽

Cited By ~ 31

Author(s):

P. Alpuim ◽

V. Chu ◽

J. P. Conde

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Films ◽

Hot Wire ◽

Microcrystalline Silicon ◽

Substrate Temperatures

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Effect of Hydrogen Radical on Properties of Hydrogen in Hydrogenated Microcrystalline Silicon

MRS Proceedings ◽

10.1557/proc-609-a6.4 ◽

2000 ◽

Vol 609 ◽

Author(s):

Takashi Itoh ◽

Noriyuki Yamana ◽

Hiroki Inouchi ◽

Norimitsu Yoshida ◽

Hidekuni Harada ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Volume Fraction ◽

Chemical Vapor ◽

Hot Wire ◽

Crystalline Volume Fraction ◽

Microcrystalline Silicon ◽

Integrated Intensity ◽

Hydrogen Radical ◽

Integrated Intensities

ABSTRACTHydrogenated microcrystalline silicon (μc-Si:H) films are prepared by hot-wire assisted plasma enhanced chemical vapor deposition, which controls the hydrogen radical density by filament temperatures, Tf, without changing other conditions. The effect of hydrogen radical on the properties of incorporated hydrogen into μc-Si:H films is studied using infrared absorption and gas effusion spectroscopies. The hydrogen concentration decreases with increasing Tf. The crystalline volume fraction, Xc, increases with Tf and shows a peak at Tf of 1850 °C. Integrated intensities of the modes near 2000 and 2100 cm-1 decrease with increasing Tf. Integrated intensity of the mode near 880 cm-1 shows almost same tendency of Xc. The effect of hydrogen radical on the properties of incorporated hydrogen into μc-Si:H films is discussed.

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