A simple tool for quality evaluation of the microcrystalline silicon prepared at high growth rate

2008 ◽  
Vol 516 (15) ◽  
pp. 4966-4969 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quality Evaluation ◽  
High Growth ◽  
High Growth Rate ◽  
Microcrystalline Silicon ◽  
Simple Tool

Guiding Principle to Develop Intrinsic Microcrystalline Silicon Absorber Layer For Solar Cell By Hot-Wire Cvd

2001 ◽  
Vol 664 ◽  
Author(s):  
A. R. Middya ◽  
U. Weber ◽  
C. Mukherjee ◽  
B. Schroeder
Keyword(s):  
Growth Rate ◽  
Solar Cell ◽  
Cell Structure ◽  
Short Circuit ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
Open Circuit ◽  
Hot Wire ◽  
Microcrystalline Silicon

ABSTRACTWe report on ways to develop device quality microcrystalline silicon (μc-Si:H) intrinsic layer with high growth rate by hot-wire chemical vapor deposition (HWCVD). With combine approach of controlling impurities and moderate H-dilution [H2/SiH4 ͌ 2.5], we developed, for the first time, highly photosensitive (103 μc-Si:Hfilms with high growth rate (>1 nm/s); the microstructure of the film is found to be close to amorphous phase (fc ͌ 46 ̻± 5%). The photosensitivity systematically decreases with fc and saturates to 10 for fc> 70%. On application of these materials in non-optimized pin [.proportional]c-Si:H solar cell structure yields 700 mV open-circuit voltage however, surprisingly low fill factor and short circuit current. The importance of reduction of oxygen impurities [O], adequate passivation of grain boundary (GB) as well as presence of inactive GB of (220) orientation to achieve efficient [.proportional]c-Si:H solar cells are discussed.

Photocarrier diffusion lengths of high-growth-rate microcrystalline silicon

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2223-2226 ◽  
Author(s):  
T. Toyama ◽  
M. Nishino ◽  
T. Kawabe ◽  
Y. Sobajima ◽  
H. Okamoto
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Microcrystalline Silicon

Recent developments in the high growth rate technique of device-grade microcrystalline silicon thin film

2003 ◽  
Vol 12 (4) ◽  
pp. S111-S116 ◽  
Author(s):  
Michio Kondo ◽  
Susumu Suzuki ◽  
Yoshiyuki Nasuno ◽  
Masayuki Tanda ◽  
Akihisa Matsuda
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Recent Developments

Transport properties of microcrystalline silicon, prepared at high growth rate

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1097-1100 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Growth Rate ◽  
Transport Properties ◽  
High Growth ◽  
High Growth Rate ◽  
Microcrystalline Silicon

Properties of Microcrystalline Silicon Prepared at High Growth Rate

2006 ◽  
Author(s):  
J. Kocka ◽  
T. Mates ◽  
M. Ledinsky ◽  
H. Stuchlikova ◽  
J. Stuchlik ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Microcrystalline Silicon

scholarly journals Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cells

2008 ◽  
Vol 57 (8) ◽  
pp. 5284
Author(s):  
Han Xiao-Yan ◽  
Hou Guo-Fu ◽  
Li Gui-Jun ◽  
Zhang Xiao-Dan ◽  
Yuan Yu-Jie ◽  
...  
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
High Growth ◽  
Interface Layer ◽  
High Growth Rate ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Low Rate

High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas

2014 ◽  
Vol 16 (5) ◽  
pp. 502-505 ◽  
Author(s):  
Jiuxiang Chen ◽  
Weizhong Wang ◽  
Jyh Shiram Cherng ◽  
Qiang Chen
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Silicon Films ◽  
Microcrystalline Silicon

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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