Guiding Principle to Develop Intrinsic Microcrystalline Silicon Absorber Layer For Solar Cell By Hot-Wire Cvd

2001 ◽  
Vol 664 ◽  
Author(s):  
A. R. Middya ◽  
U. Weber ◽  
C. Mukherjee ◽  
B. Schroeder
Keyword(s):  
Growth Rate ◽  
Solar Cell ◽  
Cell Structure ◽  
Short Circuit ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
Open Circuit ◽  
Hot Wire ◽  
Microcrystalline Silicon

ABSTRACTWe report on ways to develop device quality microcrystalline silicon (μc-Si:H) intrinsic layer with high growth rate by hot-wire chemical vapor deposition (HWCVD). With combine approach of controlling impurities and moderate H-dilution [H2/SiH4 ͌ 2.5], we developed, for the first time, highly photosensitive (103 μc-Si:Hfilms with high growth rate (>1 nm/s); the microstructure of the film is found to be close to amorphous phase (fc ͌ 46 ̻± 5%). The photosensitivity systematically decreases with fc and saturates to 10 for fc> 70%. On application of these materials in non-optimized pin [.proportional]c-Si:H solar cell structure yields 700 mV open-circuit voltage however, surprisingly low fill factor and short circuit current. The importance of reduction of oxygen impurities [O], adequate passivation of grain boundary (GB) as well as presence of inactive GB of (220) orientation to achieve efficient [.proportional]c-Si:H solar cells are discussed.

High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap

2019 ◽  
Vol 34 (04) ◽  
pp. 2050053
Author(s):  
Fatemeh Ghavami ◽  
Alireza Salehi
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
High Efficiency ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Absorber Layer ◽  
Window Layer

In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe buffer layer, CIGS absorber layer and InGaP reflector layer was studied. The study was performed using the TCAD Silvaco simulator. The effects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of different layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a fill factor (FF) of 86.67040% and an efficiency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.

Photocarrier diffusion lengths of high-growth-rate microcrystalline silicon

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2223-2226 ◽  
Author(s):  
T. Toyama ◽  
M. Nishino ◽  
T. Kawabe ◽  
Y. Sobajima ◽  
H. Okamoto
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Microcrystalline Silicon

Design and Numerical Simulation on the Optical and Electrical Behavior of a ZnO:Al Nanowire Array a-Si pin Solar Cell

2008 ◽  
Vol 1101 ◽  
Author(s):  
Chang-Wei Liu ◽  
Zingway Pei ◽  
Shu-Tong Chang ◽  
Ren-Yui Ho ◽  
Min-Wei Ho ◽  
...  
Keyword(s):  
Solar Cell ◽  
Carrier Transport ◽  
Fill Factor ◽  
Cell Structure ◽  
Short Circuit ◽  
Nanowire Array ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Sun Light

AbstractOne of the parameters that limit the efficiency of a thin film solar cell, especially the a-Si and the nc-Si solar cell is the cell thickness. Although thicker film can absorb most of the sun light, the optical generated carriers will recombination through the numerous gap states in the film that obtained lower short circuit current and fill factor. In the controversy, thinner film could not absorb enough sun light that also limit the short circuit current. In this works, we utilize nanowire structure to solve the conflict between the light absorption and the carrier transport. The designed structure has ZnO:Al nanowire array on the substrate. The p-i-n a-Si solar cell structure is grown along the surface of each ZnO: Al nanowire sequentially. Under sunlight illumination, the light is absorbed in the axis direction of the nanowire. However, the carrier transport is along the radial direction of the solar cell. Therefore, the long nanowire could absorb most of the solar light. In the mean time, the thickness of the solar cell still is thin enough for photo-generated carrier transport. The dependence of short circuit current, open circuit voltage and fill factor to the length, diameter and density of ZnO:Al nanowires were simulated.

A simple tool for quality evaluation of the microcrystalline silicon prepared at high growth rate

2008 ◽  
Vol 516 (15) ◽  
pp. 4966-4969 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quality Evaluation ◽  
High Growth ◽  
High Growth Rate ◽  
Microcrystalline Silicon ◽  
Simple Tool

Silicon nanowires solar cell

2011 ◽  
Vol 1305 ◽  
Author(s):  
Xiaobing Xie ◽  
Xiangbo Zeng ◽  
Wenjie Yao ◽  
Ping Yang ◽  
Shiyong Liu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Nanowires ◽  
Short Circuit ◽  
Nanowire Array ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Type Layer ◽  
Si Nanowire Array

ABSTRACTWe made an amorphous-silicon (a-Si) solar cell with a nanowire-array structure on stainless steel(SS) by plasma enhanced chemical vapor (PECVD) deposition. This nanowire structure has an n-type Si nanowire array in which a-Si intrinsic layer and p type layer are sequentially grown on the surface of the nanowire. The highest open-circuit voltage (Voc) and short-circuit current density (Jsc) for AM 1.5 illumination were 620 mV and 13.4 mA/cm2, respectively at a maximum power conversion efficiency of 3.57%.

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