Characterization of the Sn Doped In2O3Film Prepared by DC Magnetron Sputter Type Negative Metal Ion Beam Deposition

AbstractNitrogen-doped diamond-like carbon (DLC) films were deposited on a silicon substrate by direct metal ion beam deposition (DMIBD). Partial pressures of nitrogen gas were changed to get different compositions of nitrogen in the DLC films. The composition and surface morphology of the films were examined using X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). Effect of nitrogen doping on field emission property was studied. The field emission data indicated that the nitrogen doping lowered the turn-on field and increase the current density. It was believed that doping of nitrogen into the DLC film plays an important role in enhancement of the field emission. This enhancement of field emission could be explained by the improvement of electron transport through nitrogen-dope DLC layer.

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Growth and Characterization of NbTiN Films Synthesized by Reactive Bias Target Ion Beam Deposition (RBTIBD)

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2019.2908254 ◽

2019 ◽

Vol 29 (5) ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

Michael E. Cyberey ◽

Tannaz Farrahi ◽

Michael Eller ◽

Jiwei Lu ◽

Robert M. Weikle ◽

...

Keyword(s):

Ion Beam ◽

Ion Beam Deposition ◽

Beam Deposition

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Characterization of hydrogenated amorphous carbon thin films by end-Hall ion beam deposition

Applied Surface Science ◽

10.1016/j.apsusc.2010.12.129 ◽

2011 ◽

Vol 257 (10) ◽

pp. 4699-4705 ◽

Cited By ~ 23

Author(s):

Y. Tang ◽

Y.S. Li ◽

Q. Yang ◽

A. Hirose

Keyword(s):

Thin Films ◽

Amorphous Carbon ◽

Ion Beam ◽

Hydrogenated Amorphous Carbon ◽

Ion Beam Deposition ◽

Carbon Thin Films ◽

Hydrogenated Amorphous ◽

Beam Deposition

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Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-402-517 ◽

1995 ◽

Vol 402 ◽

Cited By ~ 1

Author(s):

H. Shibatal ◽

Y. Makital ◽

H. Katsumata ◽

S. Kimura ◽

N. Kobayashil ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ion Beam ◽

Low Energy ◽

Knudsen Cell ◽

Ion Beam Deposition ◽

Deposited Films ◽

Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

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