Ion beam deposition and structural characterization of GMR spin valves

1997 ◽  
Vol 33 (3) ◽  
pp. 2369-2374 ◽  
Author(s):  
S.X. Wang ◽  
W.E. Bailey ◽  
C. Surgers
2008 ◽  
Vol 516 (23) ◽  
pp. 8604-8608 ◽  
Author(s):  
C. Bundesmann ◽  
I.-M. Eichentopf ◽  
S. Mändl ◽  
H. Neumann

2019 ◽  
Vol 29 (5) ◽  
pp. 1-5 ◽  
Author(s):  
Michael E. Cyberey ◽  
Tannaz Farrahi ◽  
Michael Eller ◽  
Jiwei Lu ◽  
Robert M. Weikle ◽  
...  

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.


1998 ◽  
Vol 253 (1-2) ◽  
pp. 221-233 ◽  
Author(s):  
A.R. Krauss ◽  
J. Im ◽  
V. Smentkowski ◽  
J.A. Schultz ◽  
O. Auciello ◽  
...  

1992 ◽  
Vol 279 ◽  
Author(s):  
Sin-Shong Lin ◽  
Janes M. Sloan

ABSTRACTAmorphous carbon films were prepared by the ion beam deposition of methane saturated with silicon pump oil 704. The concentration of Si in the ion deposited coatings could be varied by the temperature of silicon oil bath where saturated vapor was produced. In the process, the vapor ionized at 800 V was accelerated and impinged on glass or stainless steel substrates at ion densities between 0.3–1.5 mA/cm2 for a period of less than 60 minutes. The resulting films were characterized by x-ray photoelectron and Raman spectroscopies. The elemental components of these films include carbon, oxygen and silicon with varying amounts of nitrogen, iron and tungsten contaminations. The microstructure mainly consists of tiny graphitic carbon with sp2 ordered and disordered configurations, numerous carbon-oxygen and carbon-silicon linkages. This simple unique process yields a homogeneous thin coating suitable for many tribological applications.


Sign in / Sign up

Export Citation Format

Share Document