Characteristics improvement of metalorganic chemical vapor deposition grown MgZnO films by MgO buffer layers

2009 ◽  
Vol 518 (4) ◽  
pp. 1185-1189 ◽  
Author(s):  
Dong Chan Kim ◽  
Bo Hyun Kong ◽  
Cheol Hyoun Ahn ◽  
Hyung Koun Cho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Metalorganic Chemical

A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation

CrystEngComm ◽  
2020 ◽  
Vol 22 (1) ◽  
pp. 130-141
Author(s):  
Prerna Chauhan ◽  
S. Hasenöhrl ◽  
Ľ. Vančo ◽  
P. Šiffalovič ◽  
E. Dobročka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Memory Effect ◽  
Systematic Study ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molar Fraction ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Mocvd Reactor ◽  
Metalorganic Chemical

Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor.

Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition

1996 ◽  
Vol 80 (8) ◽  
pp. 4609-4614 ◽  
Author(s):  
D. A. Turnbull ◽  
X. Li ◽  
S. Q. Gu ◽  
E. E. Reuter ◽  
J. J. Coleman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Aln Buffer ◽  
Metalorganic Chemical
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