Metalorganic Chemical Vapor Deposition of ZnO Films on Si (111) Substrates Using 3C-SiC Buffer Layers

2007 ◽  
Vol 50 (3) ◽  
pp. 598 ◽  
Author(s):  
Junjie Junjie ◽  
In-Hwan In-Hwan ◽  
Ran Ran ◽  
Zhuxi Zhuxi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Zno Films ◽  
Metalorganic Chemical

scholarly journals Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates

2009 ◽  
Vol 39 (5) ◽  
pp. 608-611 ◽  
Author(s):  
Tammy Ben-Yaacov ◽  
Tommy Ive ◽  
Chris G. Van de Walle ◽  
Umesh K. Mishra ◽  
James S. Speck ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Films ◽  
Doped Zno ◽  
Metalorganic Chemical

A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation

CrystEngComm ◽  
2020 ◽  
Vol 22 (1) ◽  
pp. 130-141
Author(s):  
Prerna Chauhan ◽  
S. Hasenöhrl ◽  
Ľ. Vančo ◽  
P. Šiffalovič ◽  
E. Dobročka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Memory Effect ◽  
Systematic Study ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molar Fraction ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Mocvd Reactor ◽  
Metalorganic Chemical

Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor.

Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition

2011 ◽  
Vol 50 (10R) ◽  
pp. 105502 ◽  
Author(s):  
Yong-Seok Choi ◽  
Dae-Kue Hwang ◽  
Bong-Joon Kwon ◽  
Jang-Won Kang ◽  
Yong-Hoon Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Films ◽  
Gas Ratio ◽  
Metalorganic Chemical
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