The effect of hot phonons on the hole drift velocity in a p-type Si/SiGe modulation doped heterostructure

2009 ◽  
Vol 517 (21) ◽  
pp. 6105-6108 ◽  
Author(s):  
Ghassem Ansaripour
Keyword(s):  
Drift Velocity ◽  
Hot Phonons ◽  
P Type

High-field drift velocity of electrons in p-type silicon

1970 ◽  
Vol 13 (7) ◽  
pp. 1115-1117 ◽  
Author(s):  
J.L. Su ◽  
Y. Nishi ◽  
J.L. Moll ◽  
A. Neukermans
Keyword(s):  
Drift Velocity ◽  
High Field ◽  
Type Silicon ◽  
P Type ◽  
Field Drift

Drift velocity of holes in germanium and silicon

1979 ◽  
Vol 57 (8) ◽  
pp. 1233-1238 ◽  
Author(s):  
H. Nakagawa ◽  
S. Zukotynski
Keyword(s):  
Experimental Data ◽  
Drift Velocity ◽  
Coupling Constants ◽  
Phonon Coupling ◽  
Key Factor ◽  
Maxwellian Distribution Function ◽  
Valence Bands ◽  
P Type ◽  
Theoretical Results ◽  
Good Agreement

The displaced Maxwellian distribution function as it applies to semiconductors with lattice limited scattering is discussed. It is shown that good agreement between theoretical results and experimental data for the drift velocity can be obtained if the phonon coupling constants are lowered somewhat from their correct values. Calculations are presented for p-type germanium and silicon and it is shown that the key factor that must be considered in both materials is the non-parabolicity of the valence bands.

scholarly journals Высоковольтные (1600 V) размыкатели тока с субнаносекундным (150 ps) быстродействием на основе 4H-SiC

2018 ◽  
Vol 44 (3) ◽  
pp. 3
Author(s):  
П.А. Иванов ◽  
О.И. Коньков ◽  
Т.П. Самсонова ◽  
А.С. Потапов
Keyword(s):  
Silicon Carbide ◽  
Drift Velocity ◽  
High Voltage ◽  
Measured Current ◽  
Breakdown Time ◽  
P Type ◽  
Short Time ◽  
First Time

AbstractHigh-voltage (1600 V) diodes based on epitaxial 4 H -SiC p ^++– p ^+– n _0– n ^+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4 H -SiC of p type is experimentally estimated for the first time: v _ sp = 3 × 10^6 cm/s.

Impact of self-heating and hot phonons on the drift velocity in graphene

2017 ◽  
Author(s):  
Jose M. Iglesias ◽  
Maria J. Martin ◽  
Elena Pascual ◽  
Raul Rengel
Keyword(s):  
Drift Velocity ◽  
Hot Phonons ◽  
Self Heating

Drift Velocity Limitation in GaN HEMT Channels

2007 ◽  
Vol 17 (01) ◽  
pp. 15-18 ◽  
Author(s):  
ARVYDAS MATULIONIS
Keyword(s):  
Drift Velocity ◽  
Alloy Scattering ◽  
Hot Phonons ◽  
Self Heating ◽  
Gan Hemt

Additional friction due to Pauli constraint, channel self-heating, alloy scattering, and hot phonons is reconsidered.

Drift Velocity Saturation in p‐Type Germanium

1959 ◽  
Vol 30 (6) ◽  
pp. 857-859 ◽  
Author(s):  
Robert D. Larrabee
Keyword(s):  
Drift Velocity ◽  
Velocity Saturation ◽  
P Type

Analytical Study Of Drift Velocity In P-Type Silicon Nanowires

2009 ◽  
Author(s):  
Mohammad Taghi Ahmadi ◽  
Ismail Saad ◽  
Munawar A. Riyadi ◽  
Razali Ismail ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Drift Velocity ◽  
Silicon Nanowires ◽  
Analytical Study ◽  
Type Silicon ◽  
P Type
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