Hydrogen in amorphous Si and Ge during solid phase epitaxy

2010 ◽  
Vol 518 (9) ◽  
pp. 2317-2322 ◽  
Author(s):  
B.C. Johnson ◽  
P. Caradonna ◽  
D.J. Pyke ◽  
J.C. McCallum ◽  
P. Gortmaker
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary

1984 ◽  
Vol 56 (2) ◽  
pp. 279-285 ◽  
Author(s):  
Yasuo Kunii ◽  
Michiharu Tabe ◽  
Kenji Kajiyama
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Facet Formation

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1992 ◽  
Author(s):  
H. Ishiwara ◽  
H. Wakabayashi ◽  
K. Miyazaki ◽  
K. Fukao ◽  
A. Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L513-L515 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Boron Doping ◽  
Solid Phase Epitaxy ◽  
Doping Effects ◽  
Amorphous Si ◽  
Si Films

Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si

1990 ◽  
Vol 205 ◽  
Author(s):  
J. S. Custer ◽  
Michael O. Thompson ◽  
D. J. Eaglesham ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Solid Phase ◽  
Amorphous Material ◽  
Intrinsic Rate ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Small Deviations ◽  
Random Nucleation ◽  
Low Concentrations ◽  
Critical Metal ◽  
Amorphous Si

AbstractThe competition between solid phase epitaxy and random nucleation during thermal annealing of amorphous Si implanted with the fast diffusers Cu and Ag has been studied. For low concentrations of these impurities, solid phase epitaxy proceeds with small deviations from the intrinsic rate and with the impurity remaining in the shrinking amorphous layer. At a critical metal concentration in the amorphous layer of ∼ 0.12 at.% rapid random nucleation occurs, halting epitaxy and transforming the remaining amorphous material to polycrystalline Si via grain growth. The nucleation rate is at least 8 orders of magnitude greater than the intrinsic homogeneous rate. At higher Cu concentrations nucleation is observed below the temperature needed for epitaxy (400°C). This nucleation, clearly caused by the presence of Cu or Ag in the layer, may be induced by the impurities exceeding the absolute stability concentration and starting to phase separate, leading to enhanced crystal Si nucleation in the metal rich regions.

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Solid Phase Epitaxy of UHV-Deposited Amorphous Si Over Recessed SiO2 Layer

1984 ◽  
Vol 35 ◽  
Author(s):  
M. Tabe ◽  
Y. Kunii
Keyword(s):  
Solid Phase ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Ultra High Vacuum ◽  
Low Density ◽  
Solid Phase Epitaxy ◽  
Planar Substrate ◽  
Shadowing Effect ◽  
Amorphous Si

ABSTRACTLateral solid phase epitaxy (L-SPE) of ultra-high-vacuum (UHV) deposited amorphous Si (a-Si) over patterned SiO2 has been studied to produce monocrystalline silicon-on-insulator (SOI) films. When employing UHV-deposited a-Si, it is essential for L-SPE to reduce step height at the pattern boundary. This is because low density a-Si including columnar voids is formed at the step wall by the self-shadowing effect and SPE region does not extend across the low density a-Si area. L-SPE growth distance of 7 μm was achieved by low temperature annealing (575°C, 20 hr) on a planar substrate with recessed SiO2 patterns. Another deposition technique of a-Si for SPE, i.e., chemical vapor deposition is reviewed for comparison.

Enhancement of lateral solid phase epitaxy over SiO2using a densified and thinned amorphous Si layer

1990 ◽  
Vol 56 (6) ◽  
pp. 560-562 ◽  
Author(s):  
K. Kusukawa ◽  
M. Moniwa ◽  
M. Ohkura ◽  
E. Takeda
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si

Laser Solid-Phase-Epitaxy of Amorphous Si1−xGex layer on Si

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasunori Sogoh ◽  
Kouicbi Murakami ◽  
Kohzoh Nasuda
Keyword(s):  
Solid Phase ◽  
Central Area ◽  
Solid Phase Epitaxy ◽  
Small Areas ◽  
Molecular Beam Deposition ◽  
Amorphous Si ◽  
Short Time ◽  
Power Densities ◽  
Beam Deposition ◽  
Strained Sige

ABSTRACTLaser Solid-phase-epitaxy (SPE) of amorphous Si1−xGex layer on Si formed by the molecular beam deposition (MBD) method was successfully performed by cw-Kr laser irradiation. Laser SPE of small areas was achieved by Laser irradiations of short time durations and high power densities The strain in the Laser-SPE layers was evaluated by micro-Raman scattering. It is demonstrated that strained SiGe layers on Si can be grown in the central area of 10μm size within the area crystallized by Laser- SPE at a substrate temperature of 400°C after preannealing at 350°C for 15 to 30 minutes.

Sign in / Sign up

Export Citation Format

Share Document