Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

AbstractThe kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers produced by ion implantation. Buried a-Si layers formed by self-ion implantation provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si, free from the rate-retarding effects of H. For the first time, dopant-enhanced SPE rates have been measured under these H-free conditions. Buried a-Si layers containing uniform As concentration profiles ranging from 1–16.1 × 1019 As.cm−3 were produced by multiple-energy ion implantation and time resolved reflectivity was used to measure SPE rates over the temperature range 480–660°C. In contrast to earlier studies, the dopant-enhanced SPE rate is found to depend linearly on the As concentration over the entire concentration range measured. The SPE rate can be expressed in the form, v/vi(T) = 1 + N/[No exp(-ΔE/kT)], where vi(T) is the intrinsic SPE rate, N is the dopant concentration and No = 1.2 × 1021 cm−3, ΔE = 0.21 eV.

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Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

MRS Proceedings ◽

10.1557/proc-25-511 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 2

Author(s):

H. Yamamoto ◽

H. Ishiwara ◽

S. Furukawa ◽

M. Tamura ◽

T. Tokuyama

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Implantation ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Si Substrates ◽

Transmission Electron ◽

Amorphous Si ◽

Si Films ◽

Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

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Kinetics of Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Buried Amorphous Si Layers

MRS Proceedings ◽

10.1557/proc-438-119 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 4

Author(s):

J. C. McCallum

Keyword(s):

Ion Implantation ◽

Dopant Concentration ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Entire Concentration Range ◽

Time Resolved ◽

Amorphous Si ◽

First Time ◽

Kinetics Of ◽

Suitable Environment

AbstractThe kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers produced by ion implantation. Buried a-Si layers formed by self-ion implantation provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si, free from the rate-retarding effects of H. For the first time, dopant-enhanced SPE rates have been measured under these H-free conditions. Buried a- Si layers containing uniform As concentration profiles ranging from 1–16.1 × 1019 As.cm-3 were produced by multiple-energy ion implantation and time resolved reflectivi[ty was used to measure SPE rates over the temperature range 480–660°C. In contrast to earlier studies, the dopant-enhanced SPE rate is found to depend linearly on the As concentration over the entire concentration range measured. The SPE rate can be expressed in the form, v/vi(T) = 1 + N/[No exp(−Λ E/kT)], where vi(T) is the intrinsic SPE rate, N is the dopant concentration and No = 1.2 × 1021 cm-3, ΔE = 0.21 eV.

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Kinetics of Solid Phase Epitaxy of Amorphous Si Induced by Self-ion Implantation into Si with Nanocavities

2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems ◽

10.1109/nems.2006.334802 ◽

2006 ◽

Author(s):

Xianfang Zhu

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Amorphous Si ◽

Kinetics Of

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Kinetics of solid phase epitaxy in buried amorphous Si layers formed by MeV ion implantation

Applied Physics Letters ◽

10.1063/1.116945 ◽

1996 ◽

Vol 69 (7) ◽

pp. 925-927 ◽

Cited By ~ 20

Author(s):

J. C. McCallum

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Amorphous Si ◽

Kinetics Of

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Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

MRS Proceedings ◽

10.1557/proc-580-117 ◽

1999 ◽

Vol 580 ◽

Author(s):

Bing-Zong Li ◽

Xin-Ping Qu ◽

Guo-Ping Ru ◽

Ning Wang ◽

Paul Chu

Keyword(s):

Epitaxial Growth ◽

Solid Phase ◽

Amorphous Layer ◽

Solid Phase Epitaxy ◽

Initial Stage ◽

Vital Effect ◽

Amorphous Si ◽

Kinetics Of ◽

State Amorphization

AbstractA multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

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Competition Between Solid Phase Epitaxy and Random Crystallization During cw Laser Annealing of Amorphous Si Films

MRS Proceedings ◽

10.1557/proc-4-169 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 6

Author(s):

J.A. Roth ◽

S.A. Kokorowski ◽

G.L. Olson ◽

L.D. Hess

Keyword(s):

Laser Annealing ◽

Volume Fraction ◽

Solid Phase ◽

Rapid Heating ◽

Film Deposition ◽

Solid Phase Epitaxy ◽

Laser Crystallization ◽

Amorphous Si ◽

Si Films ◽

Kinetics Of

ABSTRACTThe kinetics of amorphous-to-polycrystalline conversion and solid phase epitaxy (SPE) in UHV-deposited Si films have been determined over a wide temperature range by the use of optical reflectivity measurements made during rapid heating by a cw Ar laser. Crystallization rates measured in UHV following film deposition are reported and compared to rates measured in air in order to elucidate the effects of contaminants on the processes. The effects of boron doping on nucleation and growth kinetics are also reported. The crystallization rates determined in these studies can be used to predict the volume fraction of polycrystalline material formed during laserinduced SPE growth of thick epitaxial layers.

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Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Amorphous Germanium

MRS Proceedings ◽

10.1557/proc-1070-e05-06 ◽

2008 ◽

Vol 1070 ◽

Author(s):

Brett Cameron Johnson ◽

Paul Gortmaker ◽

Jeffrey C. McCallum

Keyword(s):

Activation Energy ◽

Ion Implantation ◽

Fermi Level ◽

Concentration Profile ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Amorphous Germanium ◽

Time Resolved ◽

Temperature Range ◽

Kinetics Of

ABSTRACTThe kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are studied in thick amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates for H-free Ge were measured with a time-resolved reflectivity (TRR) system in the temperature range 300 – 540 °C and found to have an activation energy of (2.15 ± 0.04) eV. Dopant enhanced SPE was measured in a-Ge layers containing a uniform concentration profile of implanted As spanning the concentration regime 1 – 10 × 1019 cm3. The generalized Fermi level shifting model shows excellent fits to the data.

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Kinetics of arsenic-enhanced solid phase epitaxy in silicon

Journal of Applied Physics ◽

10.1063/1.1682672 ◽

2004 ◽

Vol 95 (8) ◽

pp. 4427-4431 ◽

Cited By ~ 12

Author(s):

B. C. Johnson ◽

J. C. McCallum

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy ◽

Kinetics Of

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Optical Waveguide Formation by Ion Implantation of Ti or Ag

MRS Proceedings ◽

10.1557/proc-100-311 ◽

1988 ◽

Vol 100 ◽

Cited By ~ 2

Author(s):

D. B. Poker ◽

D. K. Thomas

Keyword(s):

Ion Implantation ◽

Concentration Profile ◽

Optical Waveguides ◽

Annealing Temperature ◽

Solid Phase ◽

Effective Means ◽

Complete Removal ◽

Solid Phase Epitaxy ◽

Annealing Temperatures ◽

Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

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