Epitaxial growth of CoFe2O4 on SrTiO3 (100) and MgO (100) substrates without buffer layer by laser molecular beam epitaxy technique

2011 ◽  
Vol 519 (7) ◽  
pp. 2067-2070 ◽  
Author(s):  
Z. Yang ◽  
C. Ke ◽  
L.L. Sun ◽  
W. Zhu ◽  
H.B. Lu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy

Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

2017 ◽  
Vol 10 (04) ◽  
pp. 1750036 ◽  
Author(s):  
Yunxia Zhou ◽  
Jun Zhu ◽  
Xingpeng Liu ◽  
Zhipeng Wu
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
High Energy ◽  
Text Type ◽  
Laser Molecular Beam Epitaxy

Ferroelectric Pb(Zr[Formula: see text],Ti[Formula: see text]O3(PZT) thin film was grown on [Formula: see text]-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy electron diffraction (RHEED). The crystallographical growth orientation relationship was revealed to be (002) [Formula: see text] PZT//(002) [Formula: see text] STO//(001) [Formula: see text] GaAs by RHEED and X-ray diffraction (XRD). It was found that a small lattice mismatch between PZT and GaAs with a 45[Formula: see text] in-plane rotation relationship can be formed by inserting of a buffer layer STO. Besides, the enhanced electrical properties of the heterostructure were obtained with the short-circuit photocurrent increased to 52[Formula: see text]mA/cm2 and the better power conversation efficiency increased by 20% under AM1.5[Formula: see text]G (100[Formula: see text]mW/cm[Formula: see text] illumination. The work could provide a way for the application of this kind of heterostructure with high photocurrent response in optoelectronic thin film devices.

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer

2020 ◽  
Vol 127 (21) ◽  
pp. 214104
Author(s):  
E. N. Jin ◽  
A. C. Lang ◽  
M. T. Hardy ◽  
N. Nepal ◽  
D. S. Katzer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Tio2 Buffer Layer

Epitaxial Growth of C60 Thin Films using Continuous-wave Laser Molecular Beam Epitaxy

2006 ◽  
Vol 965 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Masamitsu Haemori ◽  
Masao Katayama ◽  
Yuji Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Continuous Wave ◽  
High Energy ◽  
Imaging Plate ◽  
Continuous Wave Laser ◽  
Laser Molecular Beam Epitaxy ◽  
Wave Laser

ABSTRACTWe have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.

scholarly journals Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (11) ◽  
pp. 115216 ◽  
Author(s):  
Hongling Wei ◽  
Zhengwei Chen ◽  
Zhenping Wu ◽  
Wei Cui ◽  
Yuanqi Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy

Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

2007 ◽  
Vol 90 (1) ◽  
pp. 012902 ◽  
Author(s):  
X. Y. Zhou ◽  
J. Miao ◽  
J. Y. Dai ◽  
H. L. W. Chan ◽  
C. L. Choy ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy
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