Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer

2020 ◽  
Vol 127 (21) ◽  
pp. 214104
Author(s):  
E. N. Jin ◽  
A. C. Lang ◽  
M. T. Hardy ◽  
N. Nepal ◽  
D. S. Katzer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Tio2 Buffer Layer

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

2001 ◽  
Vol 79 (10) ◽  
pp. 1489-1491 ◽  
Author(s):  
Hai Lu ◽  
William J. Schaff ◽  
Jeonghyun Hwang ◽  
Hong Wu ◽  
Goutam Koley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Aln Buffer

scholarly journals Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

2021 ◽  
Vol 549 ◽  
pp. 149245
Author(s):  
Chaomin Zhang ◽  
Kirstin Alberi ◽  
Christiana Honsberg ◽  
Kwangwook Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Surface Treatments ◽  
Gaas Surface

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Epitaxial growth of Dy2O3 films on SrTiO3(001) substrates by molecular beam epitaxy

2011 ◽  
Vol 29 (1) ◽  
pp. 01A801 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Jean-Pierre Locquet ◽  
Jin Won Seo ◽  
Christel Dieker ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 139-143 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Kazushi Nakano ◽  
Takao Miyajima ◽  
Katsuhiro Akimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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