Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift

2012 ◽  
Vol 520 (8) ◽  
pp. 3387-3391 ◽  
Author(s):  
Toshihide Nabatame ◽  
Masayuki Kimura ◽  
Hiroyuki Yamada ◽  
Akihiko Ohi ◽  
Tomoji Ohishi ◽  
...  
Keyword(s):  
Oxygen Transfer ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage

Role of Oxygen Transfer for High-k/SiO2/Si Stack Structure on Flatband Voltage Shift

2019 ◽  
Vol 35 (4) ◽  
pp. 403-416 ◽  
Author(s):  
Toshihide Nabatame ◽  
Akihiko Ohi ◽  
Toyohiro Chikyow
Keyword(s):  
Oxygen Transfer ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage

Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

2003 ◽  
Vol 39 (21) ◽  
pp. 1499 ◽  
Author(s):  
C.W. Yang ◽  
Y.K. Fang ◽  
C.S. Lin ◽  
Y.S. Tsair ◽  
S.M. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Drain Current ◽  
Dielectric Thin Film ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage ◽  
High K Gate Dielectric

Analysis of flatband voltage shift of metal/high- k /SiO 2 /Si stack based on energy band alignment of entire gate stack

2014 ◽  
Vol 23 (11) ◽  
pp. 117702 ◽  
Author(s):  
Kai Han ◽  
Xiao-Lei Wang ◽  
Yong-Gui Xu ◽  
Hong Yang ◽  
Wen-Wu Wang
Keyword(s):  
Energy Band ◽  
Band Alignment ◽  
Gate Stack ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage

Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure

2004 ◽  
Vol 43 (11B) ◽  
pp. 7843-7847 ◽  
Author(s):  
Makoto Miyamura ◽  
Koji Masuzaki ◽  
Heiji Watanabe ◽  
Nobuyuki Ikarashi ◽  
Toru Tatsumi
Keyword(s):  
Voltage Dependence ◽  
Gate Dielectrics ◽  
Gate Stack ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage
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