The resistive switching characteristics in TaON films for nonvolatile memory applications

2013 ◽  
Vol 528 ◽  
pp. 224-228 ◽  
Author(s):  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
Yi-Chieh Chiu ◽  
Shih-Cheng Chen ◽  
Sheng-Yao Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

2011 ◽  
Vol 63 (1) ◽  
pp. 189-191 ◽  
Author(s):  
Sheng-Yao Huang ◽  
Ting-Chang Chang ◽  
Min-Chen Chen ◽  
Shih-Ching Chen ◽  
Hung-Ping Lo ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

2008 ◽  
Vol 92 (2) ◽  
pp. 022110 ◽  
Author(s):  
Wen-Yuan Chang ◽  
Yen-Chao Lai ◽  
Tai-Bor Wu ◽  
Sea-Fue Wang ◽  
Frederick Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zno Thin Films ◽  
Switching Characteristics ◽  
Memory Applications ◽  
Unipolar Resistive Switching

Nonvolatile resistive switching characteristics of HfO2 with Cu doping

2008 ◽  
Vol 1071 ◽  
Author(s):  
Weihua Guan ◽  
Shibing Long ◽  
Ming Liu ◽  
Wei Wang
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Nonvolatile Memory ◽  
Metal Electrode ◽  
Electron Beam Evaporation ◽  
Switching Behavior ◽  
Cu Doping ◽  
Low Resistance ◽  
Switching Characteristics ◽  
Memory Applications

AbstractIn this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is less than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.

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