Bipolar resistive switching characteristics of silicon carbide nitride (SiCN)-based devices for nonvolatile memory applications

2017 ◽  
Vol 43 (12) ◽  
pp. 8970-8974 ◽  
Author(s):  
Narendra Singh ◽  
Kirandeep Singh ◽  
Davinder Kaur
Keyword(s):  
Silicon Carbide ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics ◽  
Memory Applications

The resistive switching characteristics in TaON films for nonvolatile memory applications

2013 ◽  
Vol 528 ◽  
pp. 224-228 ◽  
Author(s):  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
Yi-Chieh Chiu ◽  
Shih-Cheng Chen ◽  
Sheng-Yao Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

2011 ◽  
Vol 63 (1) ◽  
pp. 189-191 ◽  
Author(s):  
Sheng-Yao Huang ◽  
Ting-Chang Chang ◽  
Min-Chen Chen ◽  
Shih-Ching Chen ◽  
Hung-Ping Lo ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Characteristics ◽  
Memory Applications
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