Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection
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2004 ◽
Vol 51
(3)
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pp. 444-451
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2003 ◽
Vol 42
(Part 1, No. 4B)
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pp. 2028-2032
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2013 ◽
Vol 13
(5)
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pp. 3293-3297
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1992 ◽
Vol 39
(7)
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pp. 1646-1651
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1990 ◽
Vol 137
(6)
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pp. 1871-1876
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