2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.

Dual Work Function Phase Controlled Ni-FUSI CMOS (NiSi NMOS, Ni2Si or Ni31Si12 PMOS): Manufacturability, Reliability & Process Window Improvement by Sacrificial SiGe Cap

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705233 ◽

2006 ◽

Cited By ~ 5

Author(s):

A. Veloso ◽

T. Hoffmann ◽

A. Lauwers ◽

S. Brus ◽

J.-F. de Marneffe ◽

...

Keyword(s):

Work Function ◽

Process Window

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A New Route to Ultra-High Density Memory Using the Micro to Nano Addressing Block (MNAB)

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705256 ◽

2006 ◽

Cited By ~ 2

Author(s):

R. Shenoy ◽

K. Gopalakrishnan ◽

C. Rettner ◽

L. Bozano ◽

R. King ◽

...

Keyword(s):

High Density

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Impact of HfSiON Induced Flicker Noise on Scaling of Future Mixed-Signal CMOS

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705239 ◽

2006 ◽

Cited By ~ 7

Author(s):

Y. Yasuda ◽

C.-H. Lin ◽

T.-J. Liu ◽

C. Hu

Keyword(s):

Flicker Noise ◽

Mixed Signal

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A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705198 ◽

2006 ◽

Cited By ~ 89

Author(s):

S. Zafar ◽

Y. Kim ◽

V. Narayanan ◽

C. Cabral ◽

V. Paruchuri ◽

...

Keyword(s):

Comparative Study ◽

Charge Trapping

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Performance Enhancement in 45-nm Ni Fully-Silicided Gate/High-k CMIS Using Substrate Ion Implantation

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705272 ◽

2006 ◽

Cited By ~ 3

Author(s):

Y. Nishida ◽

T. Yamashita ◽

S. Yamanari ◽

M. Higashi ◽

K. Shiga ◽

...

Keyword(s):

Ion Implantation ◽

Performance Enhancement ◽

High K

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A Low Cost Drive Current Enhancement Technique Using Shallow Trench Isolation Induced Stress for 45-nm Node

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705227 ◽

2006 ◽

Cited By ~ 9

Author(s):

C. Le Cam ◽

F. Guyader ◽

C. de Buttet ◽

P. Guyader ◽

G. Ribes ◽

...

Keyword(s):

Low Cost ◽

Shallow Trench Isolation ◽

Drive Current ◽

Enhancement Technique ◽

Induced Stress ◽

Trench Isolation

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Sub-1nm EOT HfSix/HfO2 Gate Stack Using Novel Si Extrusion Process for High Performance Application

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705269 ◽

2006 ◽

Cited By ~ 2

Author(s):

T. Ando ◽

T. Hirano ◽

K. Tai ◽

S. Yamaguchi ◽

T. Kato ◽

...

Keyword(s):

High Performance ◽

Extrusion Process ◽

Gate Stack ◽

High Performance Application

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The Features and Characteristics of 5-mega CMOS Image Sensor with Topologically Unique 1.7/spl m/m~1.7μm Pixels

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705257 ◽

2006 ◽

Cited By ~ 2

Author(s):

S.-H. Lee ◽

C.-R. Moon ◽

K.-H. Paik ◽

S.-H. Hwang ◽

J.-C. Shin ◽

...

Keyword(s):

Cmos Image Sensor ◽

Image Sensor

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A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705209 ◽

2006 ◽

Cited By ~ 16

Author(s):

E.-K. Lai ◽

H.-T. Lue ◽

Y.-H. Hsiao ◽

J.-Y. Hsieh ◽

S.-C. Lee ◽

...

Keyword(s):

Thin Film ◽

Flash Memory ◽

Thin Film Transistor

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Two Different Mechanisms for Determining Effective Work Function (fm,eff) on High-k - Physical Understanding and Wider Tunability of fm,eff

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. ◽

10.1109/vlsit.2006.1705276 ◽

2006 ◽

Cited By ~ 2

Author(s):

M. Kadoshima ◽

A. Ogawa ◽

H. Ota ◽

M. Ikeda ◽

M. Takahashi ◽

...

Keyword(s):

Work Function ◽

Effective Work ◽

Effective Work Function ◽

Physical Understanding ◽

High K

Download Full-text

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Dual Work Function Phase Controlled Ni-FUSI CMOS (NiSi NMOS, Ni2Si or Ni31Si12 PMOS): Manufacturability, Reliability & Process Window Improvement by Sacrificial SiGe Cap

A New Route to Ultra-High Density Memory Using the Micro to Nano Addressing Block (MNAB)

Impact of HfSiON Induced Flicker Noise on Scaling of Future Mixed-Signal CMOS

A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

Performance Enhancement in 45-nm Ni Fully-Silicided Gate/High-k CMIS Using Substrate Ion Implantation

A Low Cost Drive Current Enhancement Technique Using Shallow Trench Isolation Induced Stress for 45-nm Node

Sub-1nm EOT HfSix/HfO2 Gate Stack Using Novel Si Extrusion Process for High Performance Application

The Features and Characteristics of 5-mega CMOS Image Sensor with Topologically Unique 1.7/spl m/m~1.7μm Pixels

A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

Two Different Mechanisms for Determining Effective Work Function (fm,eff) on High-k - Physical Understanding and Wider Tunability of fm,eff

Export Citation Format

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Dual Work Function Phase Controlled Ni-FUSI CMOS (NiSi NMOS, Ni2Si or Ni31Si12 PMOS): Manufacturability, Reliability & Process Window Improvement by Sacrificial SiGe Cap

A New Route to Ultra-High Density Memory Using the Micro to Nano Addressing Block (MNAB)

Impact of HfSiON Induced Flicker Noise on Scaling of Future Mixed-Signal CMOS

A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

Performance Enhancement in 45-nm Ni Fully-Silicided Gate/High-k CMIS Using Substrate Ion Implantation

A Low Cost Drive Current Enhancement Technique Using Shallow Trench Isolation Induced Stress for 45-nm Node

Sub-1nm EOT HfSix/HfO2 Gate Stack Using Novel Si Extrusion Process for High Performance Application

The Features and Characteristics of 5-mega CMOS Image Sensor with Topologically Unique 1.7/spl m/m~1.7μm Pixels

A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

Two Different Mechanisms for Determining Effective Work Function (fm,eff) on High-k - Physical Understanding and Wider Tunability of fm,eff

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.
Latest Publications