Impact of rapid thermal annealing temperature on non-metallised polycrystalline silicon thin-film diodes on glass

2013 ◽  
Vol 534 ◽  
pp. 629-635 ◽  
Author(s):  
H. Hidayat ◽  
A. Kumar ◽  
F. Law ◽  
C. Ke ◽  
P.I. Widenborg ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Silicon Thin Film ◽  
Rapid Thermal Annealing Temperature

Polycrystalline Silicon Thin Film Formed By Multiple Pulsed Rapid Thermal Annealing – Intrinsic a-Si Film Thickness Effect

2012 ◽  
Vol 1426 ◽  
pp. 269-274 ◽  
Author(s):  
Yue Kuo ◽  
Chi-Chou Lin
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Volume Fraction ◽  
Film Deposition ◽  
Thickness Effect ◽  
Silicon Thin Film

ABSTRACTThe polycrystalline n+/intrinsic silicon thin film stacks with various original intrinsic amorphous silicon layer thicknesses were formed using the multiple pulsed rapid thermal annealing process with the Ni-induced crystallization mechanism. The thick polycrystalline silicon stack was prepared by repeated steps of 1) amorphous silicon thin film deposition, 2) solution oxidation, 3) dehydrogenation, 4) pulsed rapid thermal annealing, and 5) oxide stripping. The poly-Si film properties, such as the grain size, orientation, and volume fraction of the crystalline phase, were related to the original intrinsic silicon film thickness and the total thermal budget. This process is effective in preparing the high volume fraction polycrystalline silicon thin film, which is important for low-cost thin-film solar cells, electronic and optoelectronic devices.

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