Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition

2016 ◽  
Vol 619 ◽  
pp. 342-346 ◽  
Author(s):  
M. Hur ◽  
J.Y. Lee ◽  
W.S. Kang ◽  
J.O. Lee ◽  
Y.-H. Song ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Al2o3 Film ◽  
Layer Deposition ◽  
Gas Effect

Formation Mechanism and Photoelectric Properties of Al2O3 Film based on Atomic Layer Deposition

2021 ◽  
pp. 151419
Author(s):  
Bin Wei ◽  
Huimin Chen ◽  
Wenqiang Hua ◽  
Minyu Chen ◽  
Xingwei Ding ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Formation Mechanism ◽  
Atomic Layer ◽  
Al2o3 Film ◽  
Photoelectric Properties ◽  
Layer Deposition

Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique

2005 ◽  
Vol 483-485 ◽  
pp. 701-704 ◽  
Author(s):  
Maciej Wolborski ◽  
Mietek Bakowski ◽  
Viljami Pore ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Titanium Oxides ◽  
Al2o3 Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Capacitance Voltage ◽  
P Type ◽  
Titanium Oxide Films

Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001} substrates, with doping 6×1015cm-3 and 2×1016cm-3, respectively, and on 1.2 kV PiN 4H SiC diodes for passivation studies. The Al2O3 and SiC interface was characterised for the existence of an effective negative charge with a density of 1×1012-2×1012 cm-2. The dielectric constant of Al2O3 as determined from capacitance-voltage data was about 8.3. The maximum electric field supported by the Al2O3 film was up to 7.5 MV/cm and 8.4 MV/cm on SiC and Si, respectively.

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

2016 ◽  
Vol 45 (9) ◽  
pp. 4716-4720 ◽  
Author(s):  
Peng Zhang ◽  
Zhen-Hua Ye ◽  
Chang-Hong Sun ◽  
Yi-Yu Chen ◽  
Tian-Ning Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Infrared Detectors ◽  
Atomic Layer ◽  
Al2o3 Film ◽  
Layer Deposition

Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique

2019 ◽  
Vol 33 (6) ◽  
pp. 227-233 ◽  
Author(s):  
Hiroki Ishizaki ◽  
Masataka Iida ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Tetsuya Sato ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Technique ◽  
Si Substrate ◽  
Remote Plasma ◽  
Al2o3 Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

scholarly journals Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition

2013 ◽  
Vol 8 (1) ◽  
pp. 79 ◽  
Author(s):  
Riyanto Edy ◽  
Xiaojiang Huang ◽  
Ying Guo ◽  
Jing Zhang ◽  
Jianjun Shi
Keyword(s):  
Atomic Layer Deposition ◽  
Argon Plasma ◽  
Atomic Layer ◽  
Al2o3 Film ◽  
Layer Deposition

Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition

2015 ◽  
Vol 36 (2) ◽  
pp. 679-691 ◽  
Author(s):  
M. Hur ◽  
D. J. Kim ◽  
W. S. Kang ◽  
J. O. Lee ◽  
Y.-H. Song ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Al2o3 Film ◽  
Film Properties ◽  
Working Pressure ◽  
Layer Deposition
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