The effect of Al2O3 film on the mechanical properties of optical fiber based on atomic layer deposition

Author(s):  
Yan Wu ◽  
Yana Shang ◽  
Fufei Pang ◽  
Yanan Kang ◽  
Jianxiang Wen ◽  
...  
2021 ◽  
pp. 151419
Author(s):  
Bin Wei ◽  
Huimin Chen ◽  
Wenqiang Hua ◽  
Minyu Chen ◽  
Xingwei Ding ◽  
...  

2005 ◽  
Vol 483-485 ◽  
pp. 701-704 ◽  
Author(s):  
Maciej Wolborski ◽  
Mietek Bakowski ◽  
Viljami Pore ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
...  

Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001} substrates, with doping 6×1015cm-3 and 2×1016cm-3, respectively, and on 1.2 kV PiN 4H SiC diodes for passivation studies. The Al2O3 and SiC interface was characterised for the existence of an effective negative charge with a density of 1×1012-2×1012 cm-2. The dielectric constant of Al2O3 as determined from capacitance-voltage data was about 8.3. The maximum electric field supported by the Al2O3 film was up to 7.5 MV/cm and 8.4 MV/cm on SiC and Si, respectively.


2014 ◽  
Vol 320 ◽  
pp. 372-378 ◽  
Author(s):  
Yanhua Dong ◽  
Jianxiang Wen ◽  
Fufei Pang ◽  
Zhenyi Chen ◽  
Jie Wang ◽  
...  

2016 ◽  
Vol 27 (15) ◽  
pp. 155701 ◽  
Author(s):  
Keivan Davami ◽  
Yijie Jiang ◽  
John Cortes ◽  
Chen Lin ◽  
Mehrdad Shaygan ◽  
...  

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