Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique

2005 ◽  
Vol 483-485 ◽  
pp. 701-704 ◽  
Author(s):  
Maciej Wolborski ◽  
Mietek Bakowski ◽  
Viljami Pore ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Titanium Oxides ◽  
Al2o3 Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Capacitance Voltage ◽  
P Type ◽  
Titanium Oxide Films

Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001} substrates, with doping 6×1015cm-3 and 2×1016cm-3, respectively, and on 1.2 kV PiN 4H SiC diodes for passivation studies. The Al2O3 and SiC interface was characterised for the existence of an effective negative charge with a density of 1×1012-2×1012 cm-2. The dielectric constant of Al2O3 as determined from capacitance-voltage data was about 8.3. The maximum electric field supported by the Al2O3 film was up to 7.5 MV/cm and 8.4 MV/cm on SiC and Si, respectively.

Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 685-688 ◽  
Author(s):  
Emanuela Schilirò ◽  
Salvatore di Franco ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Hassan Gargouri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Capacitance Voltage ◽  
Mos Structures ◽  
Thermally Grown

This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films, both with and without the presence of a thin SiO2 layer, thermally grown on the 4H-SiC before ALD. Capacitance-voltage measurements on MOS structures resulted in a higher dielectric constant (ε~8.4) for the Al2O3/SiO2/SiC stack, with respect to that of the Al2O3/SiC sample (ε~ 6.7). Moreover, C<em>urrent density-Electric Field</em> measurements demonstrated a reduction of the leakage current and an improvement of the breakdown behaviour in the presence of the interfacial thermally grown SiO2. Basing on these preliminary results, possible applications of ALD-Al2O3 as gate insulator in 4H-SiC MOSFETs can be envisaged.

scholarly journals Magneto-optical characterization of ZnO / Ni nano-laminate obtained via Atomic Layer Deposition

2021 ◽  
Vol 1762 (1) ◽  
pp. 012041
Author(s):  
K Buchkov ◽  
A Galluzzi ◽  
B Blagoev ◽  
A Paskaleva ◽  
P Terziyska ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Layer Deposition

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

scholarly journals Ytterbium-doped fibers fabricated with atomic layer deposition method

2012 ◽  
Vol 20 (22) ◽  
pp. 25085 ◽  
Author(s):  
Joan J. Montiel i Ponsoda ◽  
Lars Norin ◽  
Changgeng Ye ◽  
Markus Bosund ◽  
Mikko J. Söderlund ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Method ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Doped Fibers
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